BC847C Diotec

BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - Green compound (Halogen free) with suffix on packing code and prefix on date code MECHANICAL DATA - Case: SOT- 23 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s SOT-23 - Weight: 0.008gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Power dissipation P 200 mW D BC846 80 Collector-Base Voltage BC847 V 50 V CBO BC848 30 BC846 65 Collector-Emitter Voltage BC847 V 45 V CEO BC848 30 BC846 6 Emitter-Base Voltage BC847 V 6 V EBO BC848 5 Collector Current I 0.1 A C Junction and Storage Temperature Range T , T -55 to + 150 C J STG Notes: 1. Valid provided that electrodes are kept at ambient temperature PARAMETER MIN MAX SYMBOL UNIT BC846 80 Collector-Base Breakdown Voltage I = 10AI = 0 V 50 V BC847 - C E (BR)CBO 30 BC848 BC846 65 Collector-Emitter Breakdown Voltage I = 10mA I = 0 V 45 - V BC847 C B (BR)CEO BC848 30 6 BC846 I = 1AI = 0 V Emitter-Base Breakdown Voltage 6 - V BC847 E C (BR)EBO BC848 5 Collector Cut-off Current V = 30V I = 0 I - 100 nA CB E CBO Emitter Cut-off Current V = 5 V I =0 I - 0.1 A EB C EBO 220 BC846A, BC847A, BC848A 110 V = 5V I = 2mA h DC Current Gain BC846B, BC847B, BC848B 200 450 CE C FE BC847C, BC848C 420 800 I = 100mA I = 5mA V - 0.5 Collector-Emitter Saturation Voltage V C B CE(sat) Base-Emitter Saturation Voltage I = 100mA I = 5mA V - 1.1 V C B BE(sat) V = 5V I = 10 mA f Transition frequency f= 100MHz 100 - MHz CE C T Version: G14 Document Number: DS S1404004BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (BC846A/B, BC847A/B/C, BC848A/B/C) (TA=25 unless otherwise noted) Fig.2 DC Current Gain Fig.1 Static Characteristic 400 100 I = 400A B (1) I = 350A B 300 80 I = 300A B (2) I = 250A h B 200 FE 60 I = 200A B (3) I = 150A B 100 40 I = 100A B 20 0 I = 50A 0 1 10 100 1000 B V = 5 V. I (mA) CE C 0 (1) T = 150 C. amb 0 4 8 12 16 20 (2) T = 25 C. amb V V , Collector-Emitter Voltage CE Fig. 4 Base-Emitter On Voltage Fig.3 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1200 V = 2V CE 1000 V BE (mV) 10 800 600 400 1 200 0 0. 1 1 10 100 1000 0. 1 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 V = 5 V. CE (1) T = -55 C. amb V V , Base-Emitter Voltage (2) T = 25 C. BE amb (3) T = 150 C. amb Fig.5 Collector Output Capacitance Fig. 6 Current Gain Bandwidth Product 100 1000 f=1MHz V =5V CE 10 100 1 10 0. 1 1 1 10 100 1000 0. 1 1 10 100 V V , Collector-Base Voltage CB I mA , Collector Current C Document Number: DS S1404004 Version: G14 C pF , Capacitance ob I mA , Collector Current C f MHz , Current Gain-Bandwidth Product T I mA , Collector Current C