Product Information

MB85RC1MTPNF-G-JNERE1

MB85RC1MTPNF-G-JNERE1 electronic component of Fujitsu Semiconductor

Datasheet
F-RAM 1Mbit FRAM, I2C, 1.8V 3.6V - SOP8 T&R

Manufacturer: Fujitsu Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.4675 ea
Line Total: USD 9.47

11455 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5645 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

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MB85RC1MTPNF-G-JNERE1
Fujitsu Semiconductor

1 : USD 7.107
10 : USD 6.486
100 : USD 5.6695
250 : USD 5.6465
500 : USD 5.29
1000 : USD 5.0715
1500 : USD 4.899
3000 : USD 4.508
9000 : USD 4.3815

     
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FUJITSU SEMICONDUCTOR DATA SHEET DS501-00027-4v0-E Memory FRAM 2 1M (128 K 8) Bit I C MB85RC1MT DESCRIPTION The MB85RC1MT is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC1MT is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC1MT has improved to be at 13 least 10 cycles, significantly outperforming other nonvolatile memory products in the number. The MB85RC1MT does not need a polling sequence after writing to the memory such as the case of Flash 2 memory or E PROM. FEATURES Bit configuration : 131,072 words 8 bits Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA). Operating frequency : 3.4 MHz (Max HIGH SPEED MODE) 1 MHz (Max FAST MODE PLUS) 13 Read/write endurance : 10 times / byte Data retention : 10 years ( + 85 C), 95 years ( + 55 C), over 200 years ( + 35 C) Operating power supply voltage: 1.8 V to 3.6 V Low-power consumption : Operating power supply current 0.71 mA (Typ 3.4 MHz) 1.2 mA (Max 3.4 MHz) Standby current 15 A (Typ) Sleep current 4 A (Typ) Operation ambient temperature range : 40 C to + 85 C Package : 8-pin plastic SOP (FPT-8P-M02) RoHS compliant Copyright 2014-2016 FUJITSU SEMICONDUCTOR LIMITED 2016.10MB85RC1MT PIN ASSIGNMENT (TOP VIEW) NC 8 1 VDD A1 2 7 WP 6 A2 3 SCL VSS 4 5 SDA (FPT-8P-M02) PIN FUNCTIONAL DESCRIPTIONS Pin Pin Name Functional Description Number No Connect pin 1NC Leave this pin open, or connect to VDD or VSS. Device Address pins The MB85RC1MT can be connected to the same data bus up to 4 devices. Device addresses are used in order to identify each of these devices. Connect 2, 3 A1, A2 these pins to VDD pin or VSS pin externally. Only if the combination of VDD and VSS pins matches Device Address Code inputted from the SDA pin, the device operates. In the open pin state, A1 and A2 pins are internally pulled-down and recognized as the level. 4 VSS Ground pin Serial Data I/O pin This is an I/O pin which performs bidirectional communication for both memory 5SDA address and writing/reading data. It is possible to connect multiple devices. It is an open drain output, so a pull-up resistor is required to be connected to the ex- ternal circuit. Serial Clock pin 6SCL This is a clock input pin for input/output serial data. Data is sampled on the ris- ing edge of the clock and output on the falling edge. Write Protect pin When the Write Protect pin is the H level, the writing operation is disabled. When the Write Protect pin is the L level, the entire memory region can be 7WP overwritten. The reading operation is always enabled regardless of the Write Protect pin input level. The Write Protect pin is internally pulled down to VSS pin, and that is recognized as the L level (write enabled) when the pin is the open state. 8 VDD Supply Voltage pin 2 DS501-00027-4v0-E

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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