GKN2616 GeneSiC Semiconductor

GKN26/04 thru GKN26/16 V = 400 V - 1600 V RRM Silicon Standard I =25 A F Recovery Diode Features High Surge Capability DO-4 Package Types up to 1600 V V RRM Equivalent to SKN26 Series 2 Not ESD Sensitive 2 1 1 GKN Maximum ratings, at T = 25 C, unless otherwise specified (GKR has leads reversed) j Parameter Symbol Conditions GKN26/04 GKN26/08 GKN26/12 GKN26/14 GKN26/16 Unit Repetitive peak reverse voltage V 400 800 1200 1400 1600 V RRM V 1200 1400 DC blocking voltage 400 800 1600 V DC T 100 C CContinuousontinuous forwforwardard ccurrenturrent II 2525 2525 2525 2525 2525 AA CC FF Surge non-repetitive forward I T = 25 C, t = 10 ms 375 375 375 375 375 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions GKN26/04 GKN26/08 GKN26/12 GKN26/14 GKN26/16 Unit V I = 60 A, T = 25 C 1.55 Diode forward voltage 1.55 1.55 1.55 1.55 V F F j Reverse current I V = V , T = 180 C 44 44 4 mA R R RRM j Thermal characteristics Thermal resistance, junction - R 2.00 2.00 2.00 2.00 2.00 K/W thJC case 1 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/GKN26/04 thru GKN26/16 Fig 1: Forward Characteristics Fig 2: Forward Current vs Case Temp Fig 3: Transient Thermal Impedence vs Time Fig 4: Power Dissipation vs Forward Current 2 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/