Product Information

KBU8M

KBU8M electronic component of GeneSiC Semiconductor

Datasheet
Bridge Rectifiers 1000V 8A Bridge Rectifier

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.771 ea
Line Total: USD 1.77

5230 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5230 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

KBU8M
GeneSiC Semiconductor

1 : USD 1.771
10 : USD 1.334
25 : USD 1.2075
100 : USD 1.0327
250 : USD 0.9257
400 : USD 0.8131
1200 : USD 0.7406
2800 : USD 0.7406
5200 : USD 0.7406

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Termination Style
If - Forward Current
Peak Reverse Voltage
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Ir - Reverse Current
Brand
Maximum Reverse Leakage Current
Maximum Rms Reverse Voltage
Factory Pack Quantity :
Product
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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KBU8J thru KBU8M V = 600 V - 1000 V RRM Single Phase Silicon I = 8 A O Bridge Rectifier Features Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0 Ideal for printed circuit boards High forward surge current capability KBU Package High temperature soldering guaranteed: 250C/ 10 seconds, 0.375 (9.5mm) lead length, 5 lbs. (2.3 kg) tension Types from 600 V up to1000 V V RRM Not ESD Sensitive Mechanical Data Case: Molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Mounting position: Any Mounting torque: 5 inch-lbs max Weight: 0.268 ounces, 7.6 grams Maximum ratings at Tc = 25 C, unless otherwise specified Conditions KBU8M Parameter Symbol KBU8J KBU8K Unit V 1000 Repetitive peak reverse voltage 600 800 V RRM RMS reverse voltage V 420 560 700 V RMS V 1000 DC blocking voltage 600 800 V DC T Operating temperature -55 to 150 -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics at Tc = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Conditions KBU8M Parameter Symbol KBU8J KBU8K Unit T = 100 C 8 8 8 A Maximum average forward c I O rectified current T = 45 C 6 6 6 a t = 8.3 ms, half sine Peak forward surge current I 300 300 300 A p FSM Maximum instantaneous forward V I = 8.0 A 1.0 1.0 1.0 V F F voltage drop per leg T = 25 C 10 10 10 Maximum DC reverse current at a I A R rated DC blocking voltage T = 100 C 500 500 500 a 1 Oct. 2018 KBU8J thru KBU8M 2 Oct. 2018

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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