MURTA40060 thru MURTA400120R V = 600 V - 1200 V RRM Silicon Super Fast I = 400 A F(AV) Recovery Diode Features High Surge Capability Heavy Three Tower Package Types from 600 V to 1200 V V RRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MURTA40060(R) MURTA400120(R) Unit V 1200 Repetitive peak reverse voltage 600 V RRM RMS reverse voltage V 424 --- V RMS V 1200 DC blocking voltage 600 V DC Operating temperature T -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MURTA400120(R) Parameter Symbol MURTA40060(R) Unit T = 100 C Average forward current (per pkg) I 400 400 A C F(AV) t = 8.3 ms, half sine I 3300 Peak forward surge current (per leg) p 3300 A FSM Maximum instantaneous forward V I = 200 A, T = 25 C 1.7 2.6 V F FM j voltage (per leg) Maximum instantaneous reverse T = 25 C 25 j 25 A I current at rated DC blocking voltage R T = 125 C 5 5 mA (per leg) j I =0.5 A, I =1.0 A, Maximum reverse recovery time (per F R T 180 180 ns rr leg) I = 0.25 A RR Thermal characteristics Maximum thermal resistance, junction - R 0.35 0.35 C/W JC case (per leg) 1 Oct. 2018 MURTA40060 thru MURTA400120R MURTA40060(R) Figures: 2 Oct. 2018