TM G2R1000MT17J 1700 V 1000 m SiC MOSFET Silicon Carbide MOSFET VDS = 1700 V N-Channel Enhancement Mode DS(ON)(Typ.) R = 1000 m ID (TC = 100C) = 3 A Features Package D G2R Technology Softer RDS(ON) v/s Temperature Dependency LoRing - Electromagnetically Optimized Design G RoHS Smaller RG(INT) and Lower QG KS Low Device Capacitances (C , C ) OSS RSS S Industry-Leading UIL & Short-Circuit Robustness D = Drain Robust Body Diode with Low VF and Low QRR G = Gate TO-263-7 Optimized Package with Separate Driver Source Pin S = Source REACH KS = Kelvin Source Advantages Applications Compatible with Commercial Gate Drivers Auxiliary Power Supply Low Conduction Losses at all Temperatures Solar Inverters (String and Central) Reduced Ringing Infrastructure Chargers Faster and More Efficient Switching Industrial Motors (AC Servos) Lesser Switching Spikes and Lower Losses General Purpose Inverters Better Power Density and System Efficiency Pulsed Power Ease of Paralleling without Thermal Runaway Piezo Drivers Superior Robustness and System Reliability Ion Beam Generators Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Drain-Source Voltage V V = 0 V, I = 100 A 1700 V DS(max) GS D Gate-Source Voltage (Dynamic) VGS(max) -10 / +25 V Gate-Source Voltage (Static) V Recommended Operation -5 / +20 V GS(op) T = 25C, V = -5 / +20 V 5 C GS Continuous Forward Current ID TC = 100C, VGS = -5 / +20 V 3 A Fig. 15 TC = 135C, VGS = -5 / +20 V 3 Pulsed Drain Current I t 3s, D 1%, V = 20 V, Note 1 8 A Fig. 14 D(pulse) P GS Power Dissipation P T = 25C 44 W Fig. 16 D c Non-Repetitive Avalanche Energy EAS L = 90 mH, IAS = 1.0 A 45 mJ Operating and Storage Temperature T , T -55 to 175 C j stg Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 3.03 3.37 C/W Fig. 13 thJC Weight WT 1.45 g Note 1: Pulse Width t Limited by T P j(max) Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G2R1000MT17J/G2R1000MT17J.pdf Page 1 of 13TM G2R1000MT17J 1700 V 1000 m SiC MOSFET Electrical Characteristics (At T = 25C Unless Otherwise Stated) C Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V, I = 100 A 1700 V DSS GS D Zero Gate Voltage Drain Current I V = 1700 V, V = 0 V 1 A DSS DS GS V = 0 V, V = 25 V 100 DS GS Gate Source Leakage Current IGSS nA V = 0 V, V = -10 V -100 DS GS VDS = VGS, ID = 2.0 mA 2.0 4.50 Gate Threshold Voltage V V Fig. 9 GS(th) VDS = VGS, ID = 2.0 mA, Tj = 175C 3.50 V = 10 V, I = 2 A 0.76 DS D Transconductance g S Fig. 4 fs V = 10 V, I = 2 A, T = 175C 0.84 DS D j V = 20 V, I = 2 A 1000 1250 GS D Drain-Source On-State Resistance R m Fig. 5-8 DS(ON) V = 20 V, I = 2 A, T = 175C 1479 GS D j Input Capacitance Ciss 111 Output Capacitance C 19 pF Fig. 11 oss Reverse Transfer Capacitance C 5.0 rss Coss Stored Energy Eoss 10 J Fig. 12 V = 1000 V, V = 0 V DS GS C Stored Charge Q 23 nC oss oss f = 1 MHz, VAC = 25mV Effective Output Capacitance (Energy Co(er) 20 Related) pF Note 2 Effective Output Capacitance (Time Co(tr) 23 Related) Gate-Source Charge Q 2 gs V = 1000 V, V = -5 / +20 V DS GS Gate-Drain Charge Q I = 2 A 7 nC Fig. 10 gd D Per IEC607478-4 Total Gate Charge Q 11 g Internal Gate Resistance R f = 1 MHz, V = 25 mV 5.0 G(int) AC Turn-On Switching Energy EOn 44 (Body Diode) T = 25C, V = -5/+20V, R = 8 , L = j GS G(ext) J Fig. 22,26 1000.0 H, I = 2 A, V = 1200 V Turn-Off Switching Energy D DD EOff 11 (Body Diode) Turn-On Delay Time t 6 d(on) V = 1200 V, V = -5/+20V DD GS Rise Time tr 12 RG(ext) = 8 , L = 1000.0 H, ID = 2 A ns Fig. 24 Turn-Off Delay Time t 8 d(off) Timing relative to V , Inductive load DS Fall Time t 8 f *The chip technology was characterized up to 200 V/ns. The measured dV/dt was limited by measurement test setup and package. Note 2: C , a lumped capacitance that gives same stored energy as C while V is rising from 0 to 1000V. o(er) OSS DS C , a lumped capacitance that gives same charging times as C while V is rising from 0 to 1000V. o(tr) OSS DS Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G2R1000MT17J/G2R1000MT17J.pdf Page 2 of 13