Product Information

BT25T120CKR

Name: BT25T120CKR
Brand: Huajing
SKU: BT25T120CKR_Huajing
Availability: OutOfStock
Rating: 5 (11 reviews)

BT25T120CKR electronic component of Huajing

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See Product Specifications
Datasheet

208W 50A 1.2kV Trench TO-247-3 IGBTs ROHS

Manufacturer: Huajing

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.9945 ea
Line Total: USD 2.99

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 31 May to Wed. 05 Jun MOQ : 1 Multiples : 1 BT25T120CKR Huajing	1 : USD 2.8995 10 : USD 2.5291 30 : USD 2.2981 100 : USD 2.0617 500 : USD 1.8955 1000 : USD 1.8496

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Additional Infomation About Product

The BT25T120CKR is a 208W 50A 1.2kV three-terminal Trench TO-247-3 insulated gate bipolar transistor (IGBTs) manufactured by Huajing. The device has an average current rating of 50Amps and a voltage rating of 1.2kV. It is suitable for use in medium-power switching applications such as air conditioners, variable speed drives and welding machines. It features a temperature operating range of -40°C to 150°C, a maximum surge rating of 200A, and an RMS on-state current rating of 65A. It also has ROHS certification, meaning it is free of substances that are hazardous to the environment.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Huajing may also be referenced as

HUAJING
Wuxi China Resources Huajing Microelectronics

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Manufacturer Huajing Huajing
Product Category IGBT Transistors IGBT Transistors
Category IGBT Transistors IGBT Transistors
Rohs y y
Package TO - 247 TO - 247
Brand Category Huajing Huajing
Power Dissipation Pd 208 W 208 W
Turn Off Delay Time Tdoff 198ns 198ns
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)
Turn On Delay Time Tdon 34ns 34ns
Collector Current Ic 50 A 50 A
Collector-Emitter Breakdown Voltage Vces 1.2 kV 1.2 kV
Type Trench Trench
Gate-Emitter Threshold Voltage Vgeth@Ic 5.8 V @250uA 5.8 V @250uA
Total Gate Charge Qg@Ic Vge 145 nC @25A , 15V 145 nC @25A , 15V
Collector-Emitter Saturation Voltage Vcesat@Ic Vge 1.95 V @25A , 15 V 1.95 V @25A , 15 V
Diode Reverse Recovery Time Trr - -
Turn Off Switching Loss Eoff 0.95mJ 0.95mJ
Turn On Switching Loss Eon 1.88mJ 1.88mJ
Collector Cut-Off Current Ices@Vce 1 mA @1.2kV 1 mA @1.2kV
Input Capacitance Cies@Vce 2.37 nF @30V 2.37 nF @30V
Diode Forward Voltage Vf@If 2.7 V @25A 2.7 V @25A
Pulsed Collector Current Icm 75 A 75 A