2ED2181 (4) S06F 2ED2101S06F 650 V high-side and low-side gate driver with integrated bootstrap diode Features Product summary Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology V = 650 V max S OFFSET Negative VS transient voltage immunity of - 100 V I / I (typ.) = 290 mA / 700 mA o+pk o-pk Floating channel designed for bootstrap operation V = 10 V to 20 V CC Operating voltages (VS node) upto + 650 V Delay matching = 10 ns max. Maximum bootstrap voltage (VB node) of + 675 V Propogation delay = 90 ns Integrated ultra-fast, low resistance bootstrap diode Logic operational up to 11 V on VS Pin Negative voltage tolerance on inputs of 5 V Package Independent under voltage lockout for both channels Schmitt trigger inputs with hysteresis 3.3 V, 5 V and 15 V input logic compatible Maximum supply voltage of 25 V DSO-8 package RoHS compliant DSO-8 Potential applications Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below: Motor drives, general purpose inverters having TRENCHSTOP IGBT6 or 600 V EasyPACK modules Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or TRENCHSTOP family IGBTs or their equivalent power stages Battery operated small home appliances such as power tools, vaccum cleaners using low voltage OptiMOS MOSFETs or their equivalent power stages Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having high voltage CoolMOS super junction MOSFETs or TRENCHSTOP H3 and WR5 IGBT series High power LED and HID lighting having CoolMOS super junction MOSFETs Electric vehicle (EV) charging stations and battery management systems Driving 650 V SiC MOSFETs in above applications Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Ordering information Standard pack Base part number Package type Orderable part number Form Quantity 2ED2101S06F DSO 8 Tape and Reel 2500 2ED2101S06FXUMA1 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.3 www.infineon.com/soi Page 1 of 24 2020-10-21 2ED2101S06F 650V high-side and low-side driver with integrated bootstrap diode Description The 2ED2101S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineons SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 VDC on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V. Refer to lead assignments for correct pin configuration. This diagram shows electrical connections only. Please refer to our application notes and design tips for proper circuit board layout. *Bootstrap diode is monolithically integrated Figure 1 Typical application block diagram Summary of feature comparison of the 2ED210x family: Table 1 Drive Cross current conduction Ground Part No. Package Input logic Deadtime tON / tOFF prevention pins source / logic sink + 0.29 A 2ED2101S06F DSO 8 HIN, LIN No None COM / - 0.7 A + 0.29 A 2ED2103S06F DSO 8 Yes Internal 400 ns COM 90ns HIN, LIN / - 0.7 A + 0.29 A 2ED2104S06F DSO 8 Yes Internal 400 ns COM IN, SD / - 0.7 A Datasheet 2 of 24 V 2.3 www.infineon.com/soi 2020-10-21