Product Information

AUIRFBA1405

AUIRFBA1405 electronic component of Infineon

Datasheet
Infineon IR MOSFET Automotive MOSFET 55 nC Qg, Super

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.9332 ea
Line Total: USD 5.9332

1 - Global Stock
Ships to you between
Wed. 13 Mar to Fri. 15 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Wed. 13 Mar to Fri. 15 Mar

MOQ : 1
Multiples : 1

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AUIRFBA1405
Infineon

1 : USD 3.9675
10 : USD 3.519
50 : USD 3.0705
100 : USD 2.8405
250 : USD 2.6795
500 : USD 2.553
1000 : USD 2.254
2500 : USD 2.254
5000 : USD 2.162

     
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Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Qg - Gate Charge
Qualification
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AUTOMOTIVE GRADE AUIRFBA1405 HEXFET Power MOSFET Features D V 55V (BR)DSS R typ. 4.3m DS(on) % % & max 5.0m G ( I 174A D (Silicon Limited) & I 95A % S D (Package Limited) &% ) * + ,( % & -& . / D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve S D low on-resistance per silicon area. This benefit com- G bined with the fast switching speed and ruggedized Super-220 device design that HEXFET power MOSFETs are well AUIRFBA1405 known for, provides the designer with an extremely efficient and reliable device for use in Automotive and G D S a wide variety of other applications. Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units 174 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 123 I T = 100C Continuous Drain Current, VGS 10V (Silicon Limited) D C A I T = 25C Continuous Drain Current, V 10V (Package Limited) 95 GS D C I Pulsed Drain Current 680 DM P T = 25C Power Dissipation 330 D C W Linear Derating Factor 2.2 W/C 20 V Gate-to-Source Voltage GS V 560 E Single Pulse Avalanche Energy (Thermally Limited) AS mJ See Fig.12a, 12b, 15, 16 IAR Avalanche Current A E Repetitive Avalanche Energy AR mJ 5.0 dv/dt Peak Diode recovery dv/dt V/ns -40 to + 175 T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.45 JC R Case-to-Sink, Flat, Greased Surface 0.50 CS C/W R Junction-to-Ambient 58 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance 4.3 5.0 m VGS = 10V, ID = 101A V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250 A GS(th) DS D gfs Forward Transconductance 69 S V = 25V, I = 110A DS D I Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DSS DS GS 250 V = 44V, V = 0V, T = 150C DS GS J IGSS Gate-to-Source Forward Leakage 200 nA VGS = 20V Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 170 260 I = 101A g D Qgs Gate-to-Source Charge 44 66 nC VDS = 44V Qgd Gate-to-Drain Mille) Charge 62 93 VGS = 10V t Turn-On Delay Time 13 V = 38V d(on) DD t Rise Time 190 I = 110A r D t Turn-Off Delay Time 130 ns R = 1.1 d(off) G t Fall Time 110 V = 10V f GS D L Internal Drain Inductance Between lead, D 4.5 nH 6mm (0.25in.) G L Internal Source Inductance from package S 7.5 S and center of die contact Ciss Input Capacitance 5480 VGS = 0V C Output Capacitance 1210 V = 25V oss DS = 1.0MHz, See Fig.5 C Reverse Transfer Capacitance 280 pF rss C Output Capacitance 5210 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 900 V = 0V, V = 44V, = 1.0MHz oss GS DS Coss eff. Effective Output Capacitance 1500 VGS = 0V, VDS = 0V to 44V Diode Characteristics Parameter Min. Typ. Max. Units Conditions D MOSFET symbol I Continuous Source Current S 174 showing the (Body Diode) A G integral reverse I Pulsed Source Current SM 680 S p-n junction diode. (Body Diode) V Diode Forward Voltage 1.3 V T = 25C, I = 101A, V = 0V SD J S GS t Reverse Recovery Time 88 130 ns T = 25C, I = 101A rr J F di/dt = 100A/s Q Reverse Recovery Charge 250 380 nC rr Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ton Forward Turn-On Time Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . Refer to AN-1001. oss DS DSS Starting T = 25C, L = 0.11mH J Calculated continuous current based on maximum allowable R = 25 , I = 101A. (See Figure 12). G AS junction temperature. Package limitation current is 95A. I 101A, di/dt 210A/s, V V , SD DD (BR)DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax T 175C. J avalanche performance. Pulse width 400s duty cycle 2%. R is measured at T of approximately 90C. J 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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