AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C V = 600V CES Features Standard: optimized for minimum saturation V = 1.4V CE(on) typ. G voltage and low operating frequencies (< 1kHz) Lead-Free, RoHS Compliant E V = 15V, I = 18A GE C Automotive Qualified * n-channel Benefits Typical Applications: PTC Heater, Discharge Switch & Relay Replacements 2 D Pak TO-262 AUIRG4BC30S-S AUIRG4BC30S-SL GC E Gate Collector Emitter Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25 C, unless otherwise specified A Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 34 C C I T = 100C Continuous Collector Current 18 A C C I Pulsed Collector Current 68 CM I Clamped Inductive Load Current 68 LM V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 10 mJ ARV P T = 25C Maximum Power Dissipation 100 D C W P T = 100C Maximum Power Dissipation 42 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.2 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient, typical socket mount 40 JA Wt Weight 1.44 g (oz) * When mounted on 1 square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. www.irf.com 1 12/03/10 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V / T Temperature Coeff. of Breakdown Voltage 0.75 V/C V = 0V, I = 1.0mA (BR)CES J GE C 1.40 1.6 I = 18A V = 15V C GE V Collector-to-Emitter Saturation Voltage 1.84 I = 34A See Fig. 2, 5 C CE(ON) 1.45 I = 18A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V / T Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 6.0 11 S V = 100V, I = 18A fe CE C 250 V = 0V, V = 600V GE CE I Zero Gate Voltage Collector Current A CES 2.0 V = 0V, V = 10V, T = 25C GE CE J 1000 V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 50 75 I = 18A g C Q Gate - Emitter Charge (turn-on) 7.3 11 nC V = 400V See Fig. 8 ge CC Q Gate - Collector Charge (turn-on) 17 26 V = 15V gc GE t Turn-On Delay Time 22 d(on) t Rise Time 18 T = 25C r J ns t Turn-Off Delay Time 540 810 I = 18A, V = 480V d(off) C CC t Fall Time 390 590 V = 15V, R = 23 f GE G E Turn-On Switching Loss 0.26 Energy losses includetai on E Turn-Off Switching Loss 3.45 mJ See Fig. 9, 10, 14 off E Total Switching Loss 3.71 5.6 ts t Turn-On Delay Time 21 T = 150C, d(on) J t Rise Time 19 I = 18A, V = 480V r C CC ns t Turn-Off Delay Time 790 V = 15V, R = 23 d(off) GE G t Fall Time 760 Energy losses includetai f E Total Switching Loss 6.55 mJ See Fig. 11, 14 ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 1100 V = 0V ies GE C Output Capacitance 72 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 13 = 1.0MHz res Notes: Repetitive rating V = 20V, pulse width limited by max. junction temperature (See fig. 13b). GE V = 80%(V ), V = 20V, L = 10H, R = 23 , (See fig. 13a). CC CES GE G Repetitive rating pulse width limited by maximum junction temperature. Pulse width 80s duty factor 0.1%. Pulse width 5.0s, single shot. 2 www.irf.com