AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor C V = 600V CES Features V typ. = 1.32V CE(ON) G Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) E V = 15V, IC = 31A GE n-channel Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AD package Lead-Free C Automotive Qualified* Benefits Generation 4 IGBT s offer highest efficiency available E C IGBT s optimized for specified application conditions G Designed to be adrop-i replacement for equivalent AUIRG4PC40S-E industry-standard Generation 3 IR IGBT s TO-247AD G C E Gate Collector Emitter Base part number Package Type Standard Pack Orderable Part Number Form Quantity AUIRG4PC40S-E TO-247AD Tube 25 AUIRG4PC40S-E Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 60 C C I T = 100C Continuous Collector Current 31 C C A I Pulse Collector Current 120 CM I Clamped Inductive Load Current 120 LM V Continuous Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 15 ARV P T = 25C Maximum Power Dissipation 160 D C W P T = 100C Maximum Power Dissipation 65 D C T Operating Junction and -55 to +150 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Typ. Max. Units Thermal Resistance Junction-to-Case 0.77 R JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA Wt Weight 6 (0.21) g (oz) * Qualification standard can be found at www.infineon.com/ 1 September 11, 2020 AUIRG4PC40S-E Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V = 0V, I = 250A (BR)CES GE C V V Emitter-to-Collector Breakdown Voltage 18 V = 0V, I = 1.0A (BR)ECS GE C Temperature Coeff. of Breakdown Voltage 0.75 V/C V = 0V, I = 1mA V /T GE C (BR)CES J 1.32 1.5 I = 31A, V = 15V, T = 25C C GE J 1.68 I = 60A, V = 15V, See Fig. 2,5 C GE V Collector-to-Emitter Saturation Voltage V CE(on) 1.32 I = 31A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 250A GE(th) CE GE C Threshold Voltage Temperature Coeff. -9.3 mV/C V = V , I = 250A V /T CE GE C GE(th) J gfe Forward Transconductance 12 21 S V = 100V, I = 31A CE C 250 V = 0V, V = 600V GE CE I Collector-to-Emitter Leakage Current 2.0 A V = 0V, V = 10V,T = 25C GE CE J CES 1000 V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 100 150 I = 31A g C Q Gate-to-Emitter Charge (turn-on) 14 21 nC V = 15V See Fig.8 ge GE Q Gate-to-Collector Charge (turn-on) 34 51 V = 400V gc CC t Turn-On delay time 22 d(on) t Rise time 18 I = 31A, V = 480V, V =15V r C CC GE ns t Turn-Off delay time 650 980 d(off) R = 10, T = 25C G J t Fall time 380 570 f Energy losses include tail E Turn-On Switching Loss 0.45 on E Turn-Off Switching Loss 6.5 mJ See Fig. 10, 11, 13, 14 off E Total Switching Loss 6.95 9.9 ts t Turn-On delay time 23 d(on) I = 31A, V = 480V, V =15V C CC GE t Rise time 21 r R = 10, T = 150C G J ns t Turn-Off delay time 1000 d(off) Energy losses include tail t Fall time 940 f See Fig. 13, 14 E Total Switching Loss 12 mJ ts L Internal Emitter Inductance 13 nH Measured 5mm from package E C Input Capacitance 2200 V = 0V ies GE pF V = 30V See Fig. 7 C Output Capacitance 140 oes CC C Reverse Transfer Capacitance 26 f = 1.0Mhz res Notes: Repetitive rating V = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) GE V = 80%(V ), V = 20V, L = 10H, R = 10, (See fig. 13a) CC CES GE G Repetitive rating pulse width limited by maximum junction temperature. Pulse width 80s duty factor 0.1%. Pulse width 5.0s, single shot. 2 September 11, 2020