X-On Electronics has gained recognition as a prominent supplier of AUIRG4PC40S-E IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. AUIRG4PC40S-E IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

AUIRG4PC40S-E Infineon

AUIRG4PC40S-E electronic component of Infineon
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Part No.AUIRG4PC40S-E
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors DISCRETES
Datasheet: AUIRG4PC40S-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 11.8335 ea
Line Total: USD 11.83 
Availability - 369
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
369
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 11.8335
10 : USD 10.327
25 : USD 7.774
100 : USD 7.6245
250 : USD 7.406
400 : USD 7.107
1200 : USD 7.0955
5200 : USD 7.084

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Qualification
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AUIRG4PC40S-E from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AUIRG4PC40S-E and other electronic components in the IGBT Transistors category and beyond.

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AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor C V = 600V CES Features V typ. = 1.32V CE(ON) G Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) E V = 15V, IC = 31A GE n-channel Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AD package Lead-Free C Automotive Qualified* Benefits Generation 4 IGBT s offer highest efficiency available E C IGBT s optimized for specified application conditions G Designed to be adrop-i replacement for equivalent AUIRG4PC40S-E industry-standard Generation 3 IR IGBT s TO-247AD G C E Gate Collector Emitter Base part number Package Type Standard Pack Orderable Part Number Form Quantity AUIRG4PC40S-E TO-247AD Tube 25 AUIRG4PC40S-E Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 60 C C I T = 100C Continuous Collector Current 31 C C A I Pulse Collector Current 120 CM I Clamped Inductive Load Current 120 LM V Continuous Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 15 ARV P T = 25C Maximum Power Dissipation 160 D C W P T = 100C Maximum Power Dissipation 65 D C T Operating Junction and -55 to +150 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Typ. Max. Units Thermal Resistance Junction-to-Case 0.77 R JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA Wt Weight 6 (0.21) g (oz) * Qualification standard can be found at www.infineon.com/ 1 September 11, 2020 AUIRG4PC40S-E Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V = 0V, I = 250A (BR)CES GE C V V Emitter-to-Collector Breakdown Voltage 18 V = 0V, I = 1.0A (BR)ECS GE C Temperature Coeff. of Breakdown Voltage 0.75 V/C V = 0V, I = 1mA V /T GE C (BR)CES J 1.32 1.5 I = 31A, V = 15V, T = 25C C GE J 1.68 I = 60A, V = 15V, See Fig. 2,5 C GE V Collector-to-Emitter Saturation Voltage V CE(on) 1.32 I = 31A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 250A GE(th) CE GE C Threshold Voltage Temperature Coeff. -9.3 mV/C V = V , I = 250A V /T CE GE C GE(th) J gfe Forward Transconductance 12 21 S V = 100V, I = 31A CE C 250 V = 0V, V = 600V GE CE I Collector-to-Emitter Leakage Current 2.0 A V = 0V, V = 10V,T = 25C GE CE J CES 1000 V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 100 150 I = 31A g C Q Gate-to-Emitter Charge (turn-on) 14 21 nC V = 15V See Fig.8 ge GE Q Gate-to-Collector Charge (turn-on) 34 51 V = 400V gc CC t Turn-On delay time 22 d(on) t Rise time 18 I = 31A, V = 480V, V =15V r C CC GE ns t Turn-Off delay time 650 980 d(off) R = 10, T = 25C G J t Fall time 380 570 f Energy losses include tail E Turn-On Switching Loss 0.45 on E Turn-Off Switching Loss 6.5 mJ See Fig. 10, 11, 13, 14 off E Total Switching Loss 6.95 9.9 ts t Turn-On delay time 23 d(on) I = 31A, V = 480V, V =15V C CC GE t Rise time 21 r R = 10, T = 150C G J ns t Turn-Off delay time 1000 d(off) Energy losses include tail t Fall time 940 f See Fig. 13, 14 E Total Switching Loss 12 mJ ts L Internal Emitter Inductance 13 nH Measured 5mm from package E C Input Capacitance 2200 V = 0V ies GE pF V = 30V See Fig. 7 C Output Capacitance 140 oes CC C Reverse Transfer Capacitance 26 f = 1.0Mhz res Notes: Repetitive rating V = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) GE V = 80%(V ), V = 20V, L = 10H, R = 10, (See fig. 13a) CC CES GE G Repetitive rating pulse width limited by maximum junction temperature. Pulse width 80s duty factor 0.1%. Pulse width 5.0s, single shot. 2 September 11, 2020

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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