AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE C V = 600V CES I = 24A NOMINAL E E C Tsc 6s, T = 175C G J(MAX) C G G V typ. = 1.60V E CE(ON) TO-247AC TO-247AD n-channel AUIRGP66524D0 AUIRGF66524D0 Applications G C E Air Conditioning Compressor Gate Collector Emitter Auxiliary Motor Drive Features Benefits Low V Trench IGBT Technology High Efficiency in a Wide Range of Applications CE(on) Low Switching Losses Suitable for a Wide Range of Switching Frequencies 6s SCSOA Guaranteed Enables Short Circuit Protection Scheme Square RBSOA and 100% Clamp IL Tested Rugged Hard Switching Operation Positive V Temperature Coefficient Enables Easy Paralleling of Devices CE(on) Ultra Fast Soft Recovery Co-pak Diode Better Efficiency and Improved EMI Performance Lead-Free, RoHS Compliant, Automotive Qualified * Environmentally Friendly Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity AUIRGP66524D0 TO-247AC Tube 25 AUIRGP66524D0 AUIRGF66524D0 TO-247AD Tube 25 AUIRGF66524D0 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi- tions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I Nominal Collector Current 24 Nominal I T = 25C Continuous Collector Current 60 C C I T = 100C Continuous Collector Current 40 C C I Pulse Collector Current, V = 15V 72 A CM GE I Clamped Inductive Load Current, V = 20V 96 LM GE I T = 25C Diode Continous Forward Current 55 F C I T = 100C Diode Continous Forward Current 35 F C I Diode Maximum Forward Current 72 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 dV/dt Maximum Voltage Transient 15 V/ns P T = 25C Maximum Power Dissipation 214 W D C P T = 100C Maximum Power Dissipation 107 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) *Qualification standards can be found at AUIRGP/F66524D0 Thermal Resistance Parameter Typ. Max. Units Thermal Resistance Junction-to-Case (each IGBT) 0.7 R (IGBT) JC Thermal Resistance Junction-to-Case (each Diode) 1.1 R (Diode) JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.21 V/C V =0V, I =20mA (25C-175C) V /T GE C (BR)CES J 1.60 1.90 I = 24A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 1.95 V I = 24A, V = 15V, T = 150C CE(on) C GE J 2.0 I = 24A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 5.5 6.5 7.5 V V = V , I = 250A GE(th) CE GE C Threshold Voltage temp. coefficient -28 mV/C V =V , I =1mA(25C-175C) V /TJ CE GE C GE(th) gfe Forward Transconductance 21 S V = 50V, I = 24A, PW = 20s CE C I Collector-to-Emitter Leakage Current 1.1 50 A V = 0V, V = 600V CES GE CE 1.50 1.90 I = 24A F V Diode Forward Voltage Drop V FM 1.40 I = 24A, T = 175C F J 100 nA I Gate-to-Emitter Leakage Current V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 50 80 I = 24A g C Q Gate-to-Emitter Charge (turn-on) 16 24 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 26 39 V = 400V gc CC E Turn-On Switching Loss 915 1045 on E Turn-Off Switching Loss 280 395 J off E Total Switching Loss 1195 1440 I = 24A, V = 400V, V = 15V total C CC GE t Turn-On delay time 30 50 R = 10 , L = 740H, T = 25C d(on) G J t Rise time 25 45 Energy losses include tail & diode r ns t Turn-Off delay time 75 95 reverse recovery d(off) t Fall time 25 45 f E Turn-On Switching Loss 1280 on E Turn-Off Switching Loss 550 off J I = 24A, V = 400V, V = 15V E Total Switching Loss 1830 total C CC GE t Turn-On delay time 30 R = 10 , L = 740H, T = 175C d(on) G J t Rise time 25 Energy losses include tail & diode ns r t Turn-Off delay time 100 reverse recovery d(off) t Fall time 95 f C Input Capacitance 1460 V = 0V ies GE V = 30V C Output Capacitance 120 pF oes CC C Reverse Transfer Capacitance 50 f = 1.0Mhz res T = 175C, I = 96A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 10 , V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area T = 150C, V = 400V, Vp 600V J CC 6 s Rg = 50 , V = +15V to 0V GE Erec Reverse Recovery Energy of the Diode 570 J T = 175C J t Diode Reverse Recovery Time 176 ns V = 400V, I = 24A rr CC F I Peak Reverse Recovery Current 19 A V = 15V, Rg = 10 , L = 740H rr GE Notes: V = 80% (V ), V = 20V, L = 740H, R = 10 . Refer to AN-1086 for guidelines for measuring V safely. (BR)CES CC CES GE G Pulse width limited by max. junction temperature. R is measured at T approximately 90C. J 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback October 10, 2014