AUIRGP4062D AUIRGP4062D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C V = 600V CES Low V Trench IGBT Technology CE (on) Low Switching Losses I = 24A, T = 100C C C 5s SCSOA G t 5s, T = 175C SC J(max) Square RBSOA E 100% of The Parts Tested for ILM V typ. = 1.60V CE(on) n-channel Positive V Temperature Coefficient. CE (on) Ultra Fast Soft Recovery Co-pak Diode C Tighter Distribution of Parameters C Lead-Free, RoHS Compliant Automotive Qualified * Benefits E E C C High Efficiency in a Wide Range of Applications G G TO-247AC Suitable for a Wide Range of Switching Frequencies due to TO-247AD AUIRGP4062D Low V and Low Switching Losses CE (ON) AUIRGP4062D-E Rugged Transient Performance for Increased Reliability G C E Excellent Current Sharing in Parallel Operation Gate Collector Emitter Low EMI Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRGP4062D TO-247AC Tube 25 AUIRGP4062D AUIRGP4062D-E TO-247AD Tube 25 AUIRGP4062D-E Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 48 C C I T = 100C Continuous Collector Current 24 C C I Pulse Collector Current V =15V 72 CM GE I Clamped Inductive Load Current V =20V 96 A LM GE I T = 25C Diode Continuous Forward Current 48 F C I T = 100C Diode Continuous Forward Current 24 F C I Maximum Repetitive Forward Current 96 FSM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 250 D C W P T = 100C Maximum Power Dissipation 125 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case (each IGBT) TO-247 0.65 R (IGBT) JC Thermal Resistance Junction-to-Case (each Diode) TO-247 1.62 R (Diode) JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) TO-247 0.24 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) TO-247 40 R JA *Qualification standards can be found at www.infineon.com 1 2017-08-25 AUIRGP4062D/AUIRGP4062D-E Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref. V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A CT6 GE C (BR)CES V / T Temperature Coeff. of Breakdown Voltage 0.30 V/C V = 0V, I = 1mA (25C-175C) GE C (BR)CES J 1.60 1.95 I = 24A, V = 15V, T = 25C 5,6,7 C GE J 2.03 I = 24A, V = 15V, T = 150C V Collector-to-Emitter Saturation Voltage V 9,10,11 CE(on) C GE J 2.04 I = 24A, V = 15V, T = 175C C GE J Gate Threshold Voltage 4.0 6.5 V I = 700A 9,10, V GE(th) C Threshold Voltage temp. coefficient -18 mV/C V = V , I = 1.0mA (25C-175C) 11,12 V /TJ CE GE C GE(th) gfe Forward Transconductance 17 S V = 50V, I = 24A,PW = 80s CE C 2.0 25 Collector-to-Emitter Leakage Current V = 0V, V = 600V GE CE A I CES 775 V = 0V, V = 600V,T = 175C GE CE J 1.80 2.6 I = 24A F V Diode Forward Voltage Drop V 8 FM 1.28 I = 24A, T = 175C F J Gate-to-Emitter Leakage Current 100 nA V = 20V, V = 0V I GE CE GES Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref. Fig. Q Total Gate Charge (turn-on) 50 75 I = 24A 24 g C Q Gate-to-Emitter Charge (turn-on) 13 20 V = 15V CT1 ge nC GE V = 400V Q Gate-to-Collector Charge (turn-on) 21 31 gc CC E Turn-On Switching Loss 115 201 on E Turn-Off Switching Loss 600 700 off J I = 24A, V = 400V, E Total Switching Loss 715 901 C CC total t Turn-On delay time 41 53 V = +15V,T = 25C d(on) GE J CT4 ns t Rise time 22 31 R = 10 , L = 200 H,L = 150nH , r G S t Turn-Off delay time 104 115 Energy losses include tail & diode d(off) t Fall time 29 41 reverse recovery f E Turn-On Switching Loss 420 on 13,15, J E Turn-Off Switching Loss 840 CT4 off WF1,WF2 E Total Switching Loss 1260 I = 24A, V = 400V, total C CC t Turn-On delay time 40 V = +15V,T = 175C d(on) GE J 14,16 ns t Rise time 24 R = 10 , L = 200 H, L = 150nH r G S CT4 t Turn-Off delay time 125 WF1 Energy losses include tail & diode d(off) WF2 t Fall time 39 reverse recovery f C Input Capacitance 1490 V = 0V ies GE C Output Capacitance 129 V = 30V 23 pF CC oes C Reverse Transfer Capacitance 45 f = 1.0Mhz res T = 175C, I = 96A 4 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp = 600V CT2 CC Rg = 10 , V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area V = 400V, Vp = 600V 22,CT3 CC 5 s Rg = 10 , V = +15V to 0V WF4 GE 624 T = 175C E Reverse Recovery Energy of the Diode J J 17,18,19, rec V = 400V,I = 24A,V = 15V, Diode Reverse Recovery Time 89 ns t CC F GE 20,21 rr 37 R = 10 , L = 200 H,L = 150nH I Peak Reverse Recovery Current A G S WF3 rr Notes: V = 80% (V ), V = 20V, L = 100H, R = 10. CC CES GE G This is only applied to TO-220AB package. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES 2 2017-08-25