BAR1.../BAR61...
Silicon PIN Diode
RF switch, RF attenuator for frequencies
above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BAR14-1 BAR15-1 BAR16-1 BAR61
Type Package Configuration L (nH) Marking
S
BAR14-1 SOT23 series 1.8 L7s
BAR15-1 SOT23 common cathode 1.8 L8s
BAR16-1 SOT23 common anode 1.8 L9s
BAR61 SOT143 PI element 2 61s
Maximum Ratings at T = 25C, unless otherwise specified
A
Parameter Symbol Value Unit
100 V
Diode reverse voltage V
R
140 mA
Forward current I
F
250 mW
Total power dissipation P
tot
T 65C
S
150 C
Junction temperature T
j
Operating temperature range T -55 ... 125
op
Storage temperature T -55 ... 150
stg
Thermal Resistance
Parameter Symbol Value Unit
1)
K/W
Junction - soldering point R 340
thJS
1
For calculation of R please refer to Application Note Thermal Resistance
thJA
2007-04-19
1BAR1.../BAR61...
Electrical Characteristics at T = 25C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current I nA
R
V = 50 V - - 100
R
V = 100 V - - 1000
R
- 1.05 1.25 V
Forward voltage V
F
I = 100 mA
F
AC Characteristics
pF
Diode capacitance C
T
V = 0 V, f = 100 MHz - 0.2 0.5
R
V = 50 V, f = 1 MHz - 0.25 0.5
R
- 50 100
Zero bias conductance g S
P
V = 0 V, f = 100 MHz
R
Forward resistance r
f
I = 0.01 mA, f = 100 MHz - 2600 4200
F
I = 0.1 mA, f = 100 MHz 300 470 -
F
I = 1 mA, f = 100 MHz 35 55 85
F
I = 10 mA, f = 100 MHz 5.5 8 12
F
700 1000 - ns
Charge carrier life time
rr
I = 10 mA, I = 6 mA, measured at I = 3 mA,
F R R
R = 100
L
I-region width W - 146 - m
I
2007-04-19
2