Product Information

BAS 28 E6433

BAS 28 E6433 electronic component of Infineon

Datasheet
Infineon Technologies Diodes - General Purpose, Power, Switching Silicon Switch Diode FOR HI-SPEED
Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4669 ea
Line Total: USD 0.47

4705 - Global Stock
Ships to you between
Tue. 14 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4705 - WHS 1


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

BAS 28 E6433
Infineon

1 : USD 0.4669
10 : USD 0.3289
100 : USD 0.1656
1000 : USD 0.1196
2500 : USD 0.1104
10000 : USD 0.0954
20000 : USD 0.0943
50000 : USD 0.0874
100000 : USD 0.084

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

BAS28... Silicon Switching Diode For high-speed switching applications Electrical insulated diodes 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAS28/W Type Package Configuration Marking BAS28 SOT143 parallel pair JTs BAS28W SOT343 parallel pair JTs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 80 V Diode reverse voltage V R 85 Peak reverse voltage V RM 200 mA Forward current I F Peak forward current I - FM Surge forward current, t = 1 s I 4.5 A FS Non-repetitive peak surge forward current I - FSM mW Total power dissipation P tot BAS28, T 31C 330 S BAS28W, T 103C 250 S 150 C Junction temperature T j Storage temperature T -55 ... 150 stg 1 Pb-containing package may be available upon special request 1 2007-04-19BAS28... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAS28 360 BAS28W 190 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 85 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I A R V = 75 V - - 0.1 R V = 25 V, T = 150 C - - 30 R A V = 75 V, T = 150 C - - 50 R A mV Forward voltage V F I = 1 mA - - 715 F I = 10 mA - - 855 F I = 50 mA - - 1000 F I = 100 mA - - 1200 F I = 150 mA - - 1250 F AC Characteristics - - 2 pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - - 4 ns rr I = 10 mA, I = 10 mA, measured at I = 1mA , F R R R = 100 L Test circuit for reverse recovery time D.U.T. Pulse generator: t = 100ns, D = 0.05, p t = 0.6ns, R = 50 r i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, r C 1pF EHN00019 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-19

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Infineon may also be referenced as

CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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