BF776 High Performance NPN Bipolar RF Transistor High performance low noise amplifier 3 Low minimum noise figure of typ. 0.8 dB 1.8 GHz 2 4 1 For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE and ISM bands Easy to use standard package with visible leads Pb-free (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BF776 R3s 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit V Collector-emitter voltage V CEO T = 25 C 4.0 A T = -55 C 3.5 A 13 Collector-emitter voltage V CES Collector-base voltage V 13 CBO 1.2 Emitter-base voltage V EBO 50 mA Collector current I C 3 Base current I B 1) 200 mW Total power dissipation P tot T 90C S 150 C Junction temperature T J Ambient temperature T -55 ... 150 A Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 300 thJS 1 T is measured on the emitter lead at the soldering point to the pcb S 2 For calculation of R please refer to Application Note Thermal Resistance thJA 2010-04-06 1BF776 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 4 4.7 - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - 1 - nA Collector-emitter cutoff current I CES V = 5 V, V = 0 CE BE - 1 - Collector-base cutoff current I CBO V = 5 V, I = 0 CB E - 10 - Emitter-base cutoff current I EBO V = 0.5 V, I = 0 EB C - 180 - - DC current gain h FE I = 30 mA, V = 3 V, pulse measured C CE 2010-04-06 2