BFP405 Low Noise Silicon Bipolar RF Transistor For low current applications 3 For oscillators up to 12 GHz 2 4 Minimum noise figure NF = 1.25 dB at 1.8 GHz 1 min Outstanding G = 23 dB at 1.8 GHz ms Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFP405 ALs 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit V Collector-emitter voltage V CEO T = 25 C 4.5 A T = -55 C 4.1 A 15 Collector-emitter voltage V CES 15 Collector-base voltage V CBO 1.5 Emitter-base voltage V EBO 25 mA Collector current I C 3 Base current I B 1) 75 mW Total power dissipation P tot T 110 C S 150 C Junction temperature T J Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 Stg 1 T is measured on the emitter lead at the soldering point to the pcb S 1 2013-09-19BFP405 Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 530 thJS Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 4.5 5 - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B Collector-emitter cutoff current I - - 10 A CES V = 15 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 5 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 0.5 V, I = 0 EB C 60 95 130 - DC current gain h FE I = 5 mA, V = 4 V, pulse measured C CE 1 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2 2013-09-19