X-On Electronics has gained recognition as a prominent supplier of BFP 842ESD H6327 rf bipolar transistors across the USA, India, Europe, Australia, and various other global locations. BFP 842ESD H6327 rf bipolar transistors are a product manufactured by Infineon. We provide cost-effective solutions for rf bipolar transistors, ensuring timely deliveries around the world.

BFP 842ESD H6327 Infineon

BFP 842ESD H6327 electronic component of Infineon
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Part No.BFP 842ESD H6327
Manufacturer: Infineon
Category:RF Bipolar Transistors
Description: Infineon Technologies RF Bipolar Transistors RF BIP TRANSISTORS
Datasheet: BFP 842ESD H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6289 ea
Line Total: USD 0.63

Availability - 470
Ships to you between
Tue. 11 Jun to Thu. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
470 - WHS 1


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6095
10 : USD 0.5164
100 : USD 0.3864
500 : USD 0.3036
1000 : USD 0.2346
3000 : USD 0.2127
9000 : USD 0.1955

     
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We are delighted to provide the BFP 842ESD H6327 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFP 842ESD H6327 and other electronic components in the RF Bipolar Transistors category and beyond.

BFP842ESD SiGe:C NPN RF bipolar transistor Product description The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications. Feature list Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness High transition frequency f = 57 GHz to enable best in class noise performance at high frequencies: T NF = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA min High gain G = 17.5 dB at 3.5 GHz, 2.5 V, 15 mA ma OIP = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA 3 Suitable for low voltage applications e.g. V = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require corresponding CC collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Wireless communications: WLAN, WiMAX and Bluetooth Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB (1st and 2nd stage LNA) Multimedia applications such as mobile/portable TV, mobile TV and FM radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP842ESD / BFP842ESDH6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E T9s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v2.0 www.infineon.com 2018-09-26BFP842ESD SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams . 9 3.5 Characteristic AC diagrams 12 4 Package information SOT343 .19 Revision history . 20 Disclaimer 21 Datasheet 2 v2.0 2018-09-26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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