BFR181E6327HTSA1 Infineon

BFR181E6327HTSA1 electronic component of Infineon
BFR181E6327HTSA1 Infineon
BFR181E6327HTSA1 RF Bipolar Transistors
BFR181E6327HTSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BFR181E6327HTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR181E6327HTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

Part No. BFR181E6327HTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Datasheet: BFR181E6327HTSA1 Datasheet (PDF)
Price (USD)
1563: USD 0.1664 ea
Line Total: USD 260.08 
Availability : 2425
  
Ship by Fri. 26 Sep to Thu. 02 Oct
QtyUnit Price
1563$ 0.1664
2329$ 0.1117
2334$ 0.1114
2342$ 0.111

Availability 7778
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2283
10$ 0.1444
100$ 0.1126
500$ 0.0987
1000$ 0.0954
3000$ 0.0896
6000$ 0.0863
9000$ 0.0851
24000$ 0.0851


Availability 1353
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.49
10$ 0.3556
25$ 0.2758
100$ 0.1834
135$ 0.1442


Availability 296820
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 6000
Multiples : 6000
QtyUnit Price
6000$ 0.117


Availability 2425
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1563
Multiples : 1
QtyUnit Price
1563$ 0.1664
2329$ 0.1117
2334$ 0.1114
2342$ 0.111


Availability 174
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.366
50$ 0.283
150$ 0.1857
500$ 0.1371
3000$ 0.124
6000$ 0.1158


Availability 26190
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1072
6000$ 0.0994
9000$ 0.0959
24000$ 0.0753


Availability 4056
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3695
Multiples : 1
QtyUnit Price
3695$ 0.1269
10000$ 0.1131
100000$ 0.0948

   
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We are delighted to provide the BFR181E6327HTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR181E6327HTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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The BFR181E6327HTSA1 is an N-Channel Power MOSFET from Infineon Technologies. It is designed for high-temperature operations and offers a low on-resistance, high breakdown voltage and fast switching capabilities. This MOSFET is suitable for use in automotive, industrial and commercial applications. The part features a maximum drain-source breakdown voltage of 400 V, a maximum drain current of 22 A and a maximum gate-source voltage of 20 V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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