Product Information

BFR181E6327HTSA1

BFR181E6327HTSA1 electronic component of Infineon

Datasheet
RF Bipolar Transistors NPN Silicon RF TRANSISTOR

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4474 ea
Line Total: USD 0.45

17500 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11640 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1

17500 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 0.4474
10 : USD 0.2944
100 : USD 0.1495
1000 : USD 0.1173
3000 : USD 0.0954
9000 : USD 0.0897
45000 : USD 0.0862
99000 : USD 0.0828

1736 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 5
Multiples : 5
5 : USD 0.2418
25 : USD 0.1794
100 : USD 0.1586
120 : USD 0.1365
325 : USD 0.13

64020 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 6000
Multiples : 6000
6000 : USD 0.1159

     
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The BFR181E6327HTSA1 is an N-Channel Power MOSFET from Infineon Technologies. It is designed for high-temperature operations and offers a low on-resistance, high breakdown voltage and fast switching capabilities. This MOSFET is suitable for use in automotive, industrial and commercial applications. The part features a maximum drain-source breakdown voltage of 400 V, a maximum drain current of 22 A and a maximum gate-source voltage of 20 V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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