X-On Electronics has gained recognition as a prominent supplier of BFR181E6327HTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR181E6327HTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFR181E6327HTSA1 Infineon

BFR181E6327HTSA1 electronic component of Infineon
BFR181E6327HTSA1 Infineon
BFR181E6327HTSA1 RF Bipolar Transistors
BFR181E6327HTSA1  Semiconductors

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See Product Specifications
Part No. BFR181E6327HTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Datasheet: BFR181E6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2213 ea
Line Total: USD 0.22 
Availability - 8132
Ship by Thu. 19 Jun to Mon. 23 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
300
Ship by Mon. 30 Jun to Thu. 03 Jul
MOQ : 5
Multiples : 5
5 : USD 0.366
50 : USD 0.283
150 : USD 0.1857
500 : USD 0.1372
3000 : USD 0.1239
6000 : USD 0.1159

8132
Ship by Thu. 19 Jun to Mon. 23 Jun
MOQ : 1
Multiples : 1
1 : USD 0.2213
10 : USD 0.14
100 : USD 0.1044
1000 : USD 0.0924
3000 : USD 0.0836
9000 : USD 0.0825
99000 : USD 0.0792

1411
Ship by Thu. 19 Jun to Mon. 23 Jun
MOQ : 1
Multiples : 1
1 : USD 0.616
10 : USD 0.4354
25 : USD 0.3374
100 : USD 0.2254
128 : USD 0.1484

   
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We are delighted to provide the BFR181E6327HTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR181E6327HTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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The BFR181E6327HTSA1 is an N-Channel Power MOSFET from Infineon Technologies. It is designed for high-temperature operations and offers a low on-resistance, high breakdown voltage and fast switching capabilities. This MOSFET is suitable for use in automotive, industrial and commercial applications. The part features a maximum drain-source breakdown voltage of 400 V, a maximum drain current of 22 A and a maximum gate-source voltage of 20 V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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