BFR182W Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 f = 8 GHz, NF = 0.9 dB at 900 MHz T min Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFR182W RGs SOT323 1=B 2=E 3=C Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 35 mA Collector current I C 4 Base current I B 1) 250 mW Total power dissipation P tot T 90 C S 150 C Junction temperature T J Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 240 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2014-04-07 1BFR182W Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B nA Collector-emitter cutoff current I CES V = 4 V, V = 0 - 1 30 CE BE V = 15 V, V = 0 V, T = 85 C - 5 70 CE BE A (verified by random sampling) - 1 30 Collector-base cutoff current I CBO V = 4 V, I = 0 CB E - - 50 Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 10 mA, V = 8 V, pulse measured C CE 2014-04-07 2