BFS17PE6327HTSA1 Infineon

BFS17P NPN Silicon RF Transistor Features Maximum collector-emitter voltage V = 15 V CE0 Maximum collector current I = 25 mA C Noise figure NF = 3.5 dB 3rd order output intercept point OIP = 21.5 dBm 3 1 dB output compression point P = 10 dBm -1dB Transition frequency f = 1.4 GHz T Maximum total power dissipation P = 280 mW tot Package: SOT23 Pb-free (RoHS compliant) package Potential Applications For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA For mixers and oscillators in sub-GHz applications Device Information ESD (Electrostatic discharge) sensitive device, observe handling precaution Type / Ordering code Marking Pin Configuration Package BFS17P / BFS17PE6327HTSA1 MCs 1=B 2=E 3=C SOT23 Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.1 www.infineon.com 2017-06-01BFS17P NPN Silicon RF Transistor Table of contents Table of contents Features . 1 Potential Applications 1 Device Information . 1 Table of contents . 2 1 Maximum Ratings 3 2 Thermal Resistance . 3 3 Electrical Characteristics 4 4 Typical characteristics diagrams 5 5 Package information 9 5.1 SOT23 package 9 Revision History . 10 Trademarks . 11 Datasheet 2 Revision 1.1 2017-06-01