Product Information

BG 3130 H6327

BG 3130 H6327 electronic component of Infineon

Datasheet
RF MOSFET Transistors RF MOSFETS
Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

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BG 3130 H6327
Infineon

1 : USD 0.5481
10 : USD 0.4455
100 : USD 0.28
500 : USD 0.2125
1000 : USD 0.17
3000 : USD 0.1416
6000 : USD 0.1392
9000 : USD 0.1356
24000 : USD 0.1296
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Configuration
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

BG3130... DUAL N-Channel MOSFET Tetrode Two gain controlled input stage for UHF 4 and VHF -tuners e.g. (NTSC, PAL) 5 3 6 2 1 Two AGC amplifiers in one single package Integrated gate protection diodes High AGC-range, low noise figure, high gain Improved cross modulation at gain reduction Pb-free (RoHS compliant) package Qualified according AEC Q101 BG3130 BG3130R Drain RF Output G2 + DC AGC G1 RF Input RG1 GND VGG ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Pin Configuration Marking BG3130 SOT363 1=G1* 2=G2 3=D* 4=D** 5=S 6=G1** KAs BG3130R SOT363 1=G1* 2=S 3=D* 4=D** 5=G2 6=G1** KHs * For amp. A ** for amp. B 180 rotated tape loading orientation available 1 2007-06-01BG3130... Maximum Ratings Parameter Symbol Value Unit 8 V Drain-source voltage V DS 25 mA Continuous drain current I D 1 Gate 1/ gate 2-source current I G1/2SM 6 V Gate 1/ gate 2-source voltage V G1/G2S 200 mW Total power dissipation P tot C Storage temperature T -55 ... 150 stg 150 Channel temperature T ch Thermal Resistance Parameter Symbol Value Unit 1) K/W Channel - soldering point R 280 thchs 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-06-01

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Infineon may also be referenced as

CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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