X-On Electronics has gained recognition as a prominent supplier of BGR 420 H6327 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BGR 420 H6327 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BGR 420 H6327 Infineon

BGR 420 H6327 electronic component of Infineon
BGR 420 H6327 Infineon
BGR 420 H6327 RF Bipolar Transistors
BGR 420 H6327  Semiconductors

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See Product Specifications
Part No. BGR 420 H6327
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar RF BIP TRANSISTOR
Datasheet: BGR 420 H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7203 ea
Line Total: USD 0.72 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 14 May to Fri. 16 May
MOQ : 1
Multiples : 1
1 : USD 0.7203
10 : USD 0.6171
100 : USD 0.4113
500 : USD 0.3272
1000 : USD 0.2647
3000 : USD 0.2318
9000 : USD 0.2215
24000 : USD 0.2147
45000 : USD 0.2136

   
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We are delighted to provide the BGR 420 H6327 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BGR 420 H6327 and other electronic components in the RF Bipolar Transistors category and beyond.

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Data Sheet, Rev. 1.0, Juni 2008 BGR420 NPN Silicon RF Transistor With Bias Circuitry Small Signal Discretes This datasheet has been downloaded from Edition 2008-06-06 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon Technologies AG 2008. All Rights Reserved. Attention please The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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