CY15B064Q 64-Kbit (8K 8) Serial (SPI) Automotive-A F-RAM 64-Kbit (8K 8) Serial (SPI) Automotive-A F-RAM Features Functional Description 64-Kbit ferroelectric random access memory (F-RAM) logically The CY15B064Q is a 64-Kbit nonvolatile memory employing an organized as 8K 8 advanced ferroelectric process. A ferroelectric random access 14 High-endurance 100 trillion (10 ) read/writes memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (See the Data Retention and Endurance table) while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other NoDelay writes nonvolatile memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the CY15B064Q performs Very fast serial peripheral interface (SPI) write operations at bus speed. No write delays are incurred. Data Up to 20 MHz frequency is written to the memory array immediately after each byte is Direct hardware replacement for serial flash and EEPROM successfully transferred to the device. The next bus cycle can Supports SPI mode 0 (0, 0) and mode 3 (1, 1) commence without the need for data polling. In addition, the Sophisticated write protection scheme product offers substantial write endurance compared with other Hardware protection using the Write Protect (WP) pin nonvolatile memories. The CY15B064Q is capable of supporting 14 Software protection using Write Disable instruction 10 read/write cycles, or 100 million times more write cycles than EEPROM. Software block protection for 1/4, 1/2, or entire array These capabilities make the CY15B064Q ideal for nonvolatile Low power consumption memory applications requiring frequent or rapid writes. 200 A active current at 1 MHz Examples range from data collection, where the number of write 3 A (typ) standby current cycles may be critical, to demanding industrial controls where the Low-voltage operation: V = 2.7 V to 3.65 V DD long write time of serial flash or EEPROM can cause data loss. Automotive-A temperature: 40 C to +85 C The CY15B064Q provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The 8-pin small outline integrated circuit (SOIC) package CY15B064Q uses the high-speed SPI bus, which enhances the Restriction of hazardous substances (RoHS) compliant high-speed write capability of F-RAM technology. The device specifications are guaranteed over an automotive-a temperature range of 40 C to +85 C. Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic HOLD Write Protect SCK 8 K x 8 F-RAM Array Instruction Register 13 8 Address Register Counter SI SO Data OI/ Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-10233 Rev. *B Revised April 19, 2017CY15B064Q Contents Pinout ................................................................................3 Data Retention and Endurance ..................................... 12 Pin Definitions ..................................................................3 Capacitance ....................................................................12 Functional Overview ........................................................4 Thermal Resistance ........................................................ 12 Memory Architecture ........................................................4 AC Test Conditions ........................................................ 12 Serial Peripheral Interface SPI Bus ..............................4 AC Switching Characteristics ....................................... 13 SPI Overview ...............................................................4 Power Cycle Timing ....................................................... 15 SPI Modes ...................................................................6 Ordering Information ...................................................... 16 Power Up to First Access ............................................6 Ordering Code Definitions ......................................... 16 Command Structure ....................................................6 Package Diagram ............................................................ 17 WREN - Set Write Enable Latch .................................6 Acronyms ........................................................................18 WRDI - Reset Write Enable Latch ...............................7 Document Conventions ................................................. 18 Status Register and Write Protection .............................7 Units of Measure ....................................................... 18 RDSR - Read Status Register .....................................8 Document History Page ................................................. 19 WRSR - Write Status Register ....................................8 Sales, Solutions, and Legal Information ...................... 20 Memory Operation ............................................................9 Worldwide Sales and Design Support ....................... 20 Write Operation ...........................................................9 Products ....................................................................20 Read Operation ...........................................................9 PSoC Solutions ...................................................... 20 HOLD Pin Operation .................................................10 Cypress Developer Community ................................. 20 Endurance .................................................................10 Technical Support ..................................................... 20 Maximum Ratings ...........................................................11 Operating Range .............................................................11 DC Electrical Characteristics ........................................11 Document Number: 002-10233 Rev. *B Page 2 of 20