X-On Electronics has gained recognition as a prominent supplier of CY15B128J-SXE f-ram across the USA, India, Europe, Australia, and various other global locations. CY15B128J-SXE f-ram are a product manufactured by Infineon. We provide cost-effective solutions for f-ram, ensuring timely deliveries around the world.

CY15B128J-SXE Infineon

CY15B128J-SXE electronic component of Infineon
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Part No.CY15B128J-SXE
Manufacturer: Infineon
Category:F-RAM
Description: F-RAM 128Kb serial I2C F-RAM, 3Volt
Datasheet: CY15B128J-SXE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

485: USD 6.9125 ea
Line Total: USD 3352.56

Availability - 0
MOQ: 485  Multiples: 485
Pack Size: 485
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 485
Multiples : 485
485 : USD 6.636

     
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We are delighted to provide the CY15B128J-SXE from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY15B128J-SXE and other electronic components in the F-RAM category and beyond.

CY15B128J 2 128-Kbit (16K 8) Automotive Serial (I C) F-RAM 128-Kbit (16K 8) Automotive Serial (I2C) F-RAM Features Functional Description The CY15B128J is a 128-Kbit nonvolatile memory employing an 128-Kbit ferroelectric random access memory (F-RAM) advanced ferroelectric process. An F-RAM is nonvolatile and logically organized as 16K 8 14 performs reads and writes similar to a RAM. It provides reliable High-endurance 100 trillion (10 ) read/writes data retention for 151 years while eliminating the complexities, 151-year data retention (See the Data Retention and overhead, and system-level reliability problems caused by Endurance table) EEPROM and other nonvolatile memories. NoDelay writes Unlike EEPROM, the CY15B128J performs write operations at Advanced high-reliability ferroelectric process bus speed. No write delays are incurred. Data is written to the 2 Fast two-wire serial interface (I C) memory array immediately after each byte is successfully 1 Up to 3.4 MHz frequency transferred to the device. The next bus cycle can commence Direct hardware replacement for serial EEPROM without the need for data polling. In addition, the product offers Supports legacy timings for 100 kHz and 400 kHz substantial write endurance compared with other nonvolatile memories. F-RAM also exhibits much lower power during writes Device ID than EEPROM because write operations do not require an Manufacturer ID and Product ID internally elevated power supply voltage for write circuits. The 14 Low-power consumption CY15B128J is capable of supporting 10 read/write cycles, or 175 A active current at 100 kHz 100 million times more write cycles than EEPROM. 150 A standby current These capabilities make the CY15B128J ideal for nonvolatile 8 A sleep mode current memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write Low-voltage operation: V = 2.0 V to 3.6 V DD cycles may be critical, to demanding industrial controls where the Automotive-A temperature: 40 C to +85 C long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with 8-pin small outline integrated circuit (SOIC) package less overhead for the system. Restriction of hazardous substances (RoHS) compliant The CY15B128J provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The device incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an Automotive-A temperature range of 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram Address 16 K x 8 Counter F-RAM Array Latch 14 8 Serial to Parallel SDA Data Latch Converter 8 8 SCL Device ID and Control Logic WP Manufacturer ID A0-A2 Note 2 1. The CY15B128J does not meet the NXP I C specification in the Fast-mode Plus (Fm+, 1 MHz) for I and in the High Speed Mode (Hs-mode, 3.4 MHz) for V . OL hys Refer to the DC Electrical Characteristics table for more details. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-90872 Rev. *I Revised January 24, 2018CY15B128J Contents Pinout ................................................................................3 Data Retention and Endurance ..................................... 12 Pin Definitions ..................................................................3 Capacitance .................................................................... 12 Functional Overview ........................................................4 Thermal Resistance ........................................................ 12 Memory Architecture ........................................................4 AC Test Loads and Waveforms ..................................... 12 Two-wire Interface ............................................................4 AC Test Conditions ........................................................ 12 STOP Condition (P) .....................................................4 AC Switching Characteristics ....................................... 13 START Condition (S) ...................................................4 Power Cycle Timing ....................................................... 14 Data/Address Transfer ................................................5 Ordering Information ...................................................... 15 Acknowledge/No-acknowledge ...................................6 Ordering Code Definitions ......................................... 15 High Speed Mode (Hs-mode) ......................................6 Package Diagram ............................................................ 16 Slave Device Address .................................................6 Acronyms ........................................................................ 17 Addressing Overview ..................................................7 Document Conventions ................................................. 17 Data Transfer ..............................................................7 Units of Measure ....................................................... 17 Memory Operation ............................................................7 Document History Page ................................................. 18 Write Operation ...........................................................7 Sales, Solutions, and Legal Information ...................... 20 Read Operation ...........................................................8 Worldwide Sales and Design Support ....................... 20 Sleep Mode .................................................................9 Products .................................................................... 20 Device ID .........................................................................10 PSoC Solutions ...................................................... 20 Maximum Ratings ...........................................................11 Cypress Developer Community ................................. 20 Operating Range .............................................................11 Technical Support ..................................................... 20 DC Electrical Characteristics ........................................11 Document Number: 001-90872 Rev. *I Page 2 of 20

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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