CY15B102QN PRELIMINARY CY15V102QN Excelon-Auto 2-Mbit (256K 8) Automotive-E Serial (SPI) F-RAM 2-Mbit (256K 8) Automotive-E Serial (SPI) F-RAM Features Functional Description 2-Mbit ferroelectric random access memory (F-RAM) logically The Excelon-Auto CY15X102QN is an automotive grade, 2-Mbit organized as 256K 8 nonvolatile memory employing an advanced ferroelectric 13 process. A ferroelectric random access memory or F-RAM is Virtually unlimited endurance of 10 trillion (10 ) read/write nonvolatile and performs reads and writes similar to a RAM. It cycles provides reliable data retention for 121 years while eliminating 121-year data retention (See Data Retention and Endurance the complexities, overhead, and system-level reliability problems on page 19) caused by serial flash, EEPROM, and other nonvolatile NoDelay writes memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the CY15X102QN performs Fast serial peripheral interface (SPI) write operations at bus speed. No write delays are incurred. Data Up to 50 MHz frequency is written to the memory array immediately after each byte is Supports SPI mode 0 (0, 0) and mode 3 (1, 1) successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the Sophisticated write protection scheme product offers substantial write endurance compared to other Hardware protection using the Write Protect (WP) pin nonvolatile memories. The CY15X102QN is capable of Software protection using Write Disable (WRDI) instruction 13 supporting 10 read/write cycles, or 10 million times more write Software block protection for 1/4, 1/2, or entire array cycles than EEPROM. Device ID and Serial Number These capabilities make the CY15X102QN ideal for nonvolatile memory applications, requiring frequent or rapid writes. Device ID includes manufacturer ID and product ID Examples range from data collection, where the number of write Unique ID cycles may be critical, to demanding industrial controls where the Serial Number long write time of serial flash or EEPROM can cause data loss. Dedicated 256-byte special sector F-RAM The CY15X102QN provides substantial benefits to users of Dedicated special sector write and read serial EEPROM or flash as a hardware drop-in replacement. The Stored content can survive up to 3 standard reflow soldering CY15X102QN uses the high-speed SPI bus, which enhances cycles the high-speed write capability of F-RAM technology. The device incorporates a read-only Device ID and Unique ID features, Low-power consumption which allow the host to determine the manufacturer, product 3.7 mA (typ) active current at 40 MHz density, product revision, and unique ID for each part. The device 40 A (typ) standby current also provides a writable, 8-byte serial number registers, which 1.1 A (typ) Deep Power Down mode current can be used to identify a specific board or a system. 0.1 A (typ) Hibernate mode current For a complete list of related resources, click here. Low-voltage operation: CY15V102QN: V = 1.71 V to 1.89 V DD CY15B102QN: V = 1.8 V to 3.6 V DD Automotive operating temperature: 40 C to +125 C AEC - Q100 Grade 1 compliant 8-pin Small Outline Integrated Circuit (SOIC) package Restriction of hazardous substances (RoHS) compliant Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-19073 Rev. *I Revised July 31, 2018CY15B102QN PRELIMINARY CY15V102QN Logic Block Diagram WP 256-Byte Special Sector F-RAM CS Instruction Decoder SCK F-RAM Control Control Logic 256K x 8 Write Protect F-RAM Array SI Data I/O Register SO Nonvolatile Status Register Device ID and Serial Number Registers Document Number: 002-19073 Rev. *I Page 2 of 31