X-On Electronics has gained recognition as a prominent supplier of CY62147EV18LL-55BVXIT SRAM across the USA, India, Europe, Australia, and various other global locations. CY62147EV18LL-55BVXIT SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62147EV18LL-55BVXIT Infineon

CY62147EV18LL-55BVXIT electronic component of Infineon
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Part No.CY62147EV18LL-55BVXIT
Manufacturer: Infineon
Category: SRAM
Description: SRAM 4Mb 1.8V 55ns 256K x 16 LP SRAM
Datasheet: CY62147EV18LL-55BVXIT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 4.68 ea
Line Total: USD 9360

Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 2000
Multiples : 2000
2000 : USD 4.68

0 - WHS 2


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 2000
Multiples : 2000
2000 : USD 5.0255
4000 : USD 4.9565
10000 : USD 4.83

   
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We are delighted to provide the CY62147EV18LL-55BVXIT from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62147EV18LL-55BVXIT and other electronic components in the SRAM category and beyond.

CY62147EV18 MoBL 4-Mbit (256 K 16) Static RAM 4-Mbit (256 K 16) Static RAM advanced circuit design to provide ultra low active current. This Features is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an Very high speed: 55 ns automatic power down feature that significantly reduces power Wide voltage range: 1.65 V to 2.25 V consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more Pin compatible with CY62147DV18 than 99% when deselected (CE HIGH or both BLE and BHE are Ultra low standby power HIGH). The input and output pins (I/O through I/O ) are placed 0 15 in a high impedance state when the device is deselected (CE Typical standby current: 1 A HIGH), the outputs are disabled (OE HIGH), both the Byte High Maximum standby current: 7 A Enable and the Byte Low Enable are disabled (BHE, BLE HIGH), Ultra low active power or during an active write operation (CE LOW and WE LOW). Typical active current: 2 mA at f = 1 MHz To write to the device, take Chip Enable (CE) and Write Enable Ultra low standby power (WE) inputs LOW. If Byte Low Enable (BLE) is LOW then data from I/O pins (I/O through I/O ) is written into the location 0 7 Easy memory expansion with CE and OE features specified on the address pins (A through A ). If Byte High 0 17 Enable (BHE) is LOW, then data from I/O pins (I/O through Automatic power down when deselected 8 I/O ) is written into the location specified on the address pins 15 Complementary metal oxide semiconductor (CMOS) for (A through A ). 0 17 optimum speed and power To read from the device, take Chip Enable (CE) and Output Available in a Pb-free 48-ball very fine ball grid array (VFBGA) Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If package Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins apears on I/O to I/O . If 0 7 Functional Description Byte High Enable (BHE) is LOW, then data from memory appears on I/O to I/O . See the Truth Table on page 11 for a 8 15 The CY62147EV18 is a high performance CMOS static RAM complete description of read and write modes. organized as 256 K words by 16 bits. This device features Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 6 256K x 16 A 5 I/O I/O 0 7 A RAM Array 4 A 3 I/O I/O 8 15 A 2 A 1 A 0 COLUMN DECODER BHE CE POWER DOWN WE BHE CIRCUIT CE BLE OE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05441 Rev. *J Revised August 22, 2013 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 A 17 SENSE AMPS CY62147EV18 MoBL Contents Product Portfolio ..............................................................3 Ordering Information ...................................................... 12 Pin Configuration .............................................................3 Ordering Code Definitions ......................................... 12 Maximum Ratings .............................................................4 Package Diagram ............................................................ 13 Operating Range ...............................................................4 Acronyms ........................................................................14 Electrical Characteristics .................................................4 Document Conventions ................................................. 14 Capacitance ......................................................................5 Units of Measure ....................................................... 14 Thermal Resistance ..........................................................5 Document History Page ................................................. 15 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 17 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 17 Data Retention Waveform ................................................6 Products ....................................................................17 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 17 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 17 Truth Table ......................................................................11 Technical Support ..................................................... 17 Document Number: 38-05441 Rev. *J Page 2 of 17

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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