Product Information

CY62148ESL-55ZAXIT

CY62148ESL-55ZAXIT electronic component of Infineon

Datasheet
SRAM 4Mb 55ns 512K x 8 Low Power SRAM

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.0155 ea
Line Total: USD 8.02

3880 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3880 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 8.0155
10 : USD 7.498
25 : USD 7.314
100 : USD 6.6355
250 : USD 6.5435
500 : USD 6.2215
1000 : USD 6.0145
1500 : USD 5.635
3000 : USD 5.566

     
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CY62148ESL MoBL 4-Mbit (512 K 8) Static RAM 4-Mbit (512 K 8) Static RAM Features Functional Description Higher speed up to 55 ns The CY62148ESL is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL ) in portable Ultra low standby power applications. The device also has an automatic power-down Typical standby current: 1 A feature that significantly reduces power consumption. Placing Maximum standby current: 7 A the device in standby mode reduces power consumption by Ultra low active power more than 99 percent when deselected (CE HIGH). The eight input and output pins (I/O through I/O ) are placed in a high Typical active current: 2 mA at f = 1 MHz 0 7 impedance state when the device is deselected (CE HIGH), the Easy memory expansion with CE and OE features outputs are disabled (OE HIGH), or during a write operation (CE LOW and WE LOW). Automatic power-down when deselected To write to the device, take Chip Enable (CE) and Write Enable Complementary metal oxide semiconductor (CMOS) for (WE) inputs LOW. Data on the eight I/O pins (I/O through I/O ) 0 7 optimum speed and power is then written into the location specified on the address pins (A 0 through A ). Available in Pb-free 32-pin shrunk thin small outline package 18 (STSOP) package To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The CY62148ESL device is suitable for interfacing with processors that have TTL I/P levels. It is not suitable for processors that require CMOS I/P levels. Please see Electrical Characteristics on page 4 for more details and suggested alternatives. Logic Block Diagram A 0 I/O IO INPUT BUFFER 0 0 A 1 A 2 I/O IO 1 1 A 3 A I/O 4 IO 2 2 A 5 A I/O 6 512K x 8 3 IO 3 A 7 A I/O 8 IO 4 ARRAY 4 A 9 A I/O 10 5 IO 5 A 11 A I/O 12 6 IO 6 CE I/O 7 IO POWER 7 COLUMN DECODER WE DOWN OE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-50045 Rev. *I Revised August 19, 2013 ROW DECODER A 13 A 14 A 15 A 16 A 17 A 18 SENSE AMPS CY62148ESL MoBL Contents Pin Configuration .............................................................3 Ordering Information ...................................................... 11 Product Portfolio ..............................................................3 Ordering Code Definitions ......................................... 11 Maximum Ratings .............................................................4 Package Diagram ............................................................ 12 Operating Range ...............................................................4 Acronyms ........................................................................13 Electrical Characteristics .................................................4 Document Conventions ................................................. 13 Capacitance ......................................................................5 Units of Measure ....................................................... 13 Thermal Resistance ..........................................................5 Document History Page ................................................. 14 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 15 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 15 Data Retention Waveform ................................................6 Products ....................................................................15 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 15 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 15 Truth Table ......................................................................10 Technical Support ..................................................... 15 Document Number: 001-50045 Rev. *I Page 2 of 15

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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