DD82S10K Infineon

DD82S10K electronic component of Infineon Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DD82S10K Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DD82S10K Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No. DD82S10K
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1000V 150A
Datasheet: DD82S10K Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 104.9688
5$ 103.0348
10$ 100.0109
25$ 96.688
100$ 93.2153
250$ 88.7063
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 90.025
N/A

Obsolete
   
Manufacturer
Product Category
Mounting
Case
Electrical Mounting
Semiconductor Structure
Type Of Module
Max Load Current
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DD82S10K from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD82S10K and other electronic components in the Discrete Semiconductor Modules category and beyond.

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European Power- Semiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 82 S M5x11 Z4-1 15,5 20 20 80 92 AK K A March 1998DD 82 S Elektrische Eigenschaften Electrical properties Hchstzulssige Werte Maximum rated values 100 600 800 Periodische Spitzensperrspannung repetitive peak reverse voltage t = -40C...t V V vj vj max RRM 1000 100 600 800 t = +25C...t V = V Stospitzenspannung non-repetitive peak reverse voltage V vj vj max RSM RRM 1000 Durchlastrom-Grenzeffektivwert RMS forward current I 150 A FRMSM Dauergrenzstrom average forward current t = 100C I 81 A c FAVM t = 88C 96 A c I Stostrom-Grenzwert surge current t 45C, t = 10 ms 2300 A vj p FSM t 150C, t = 10 ms 1900 A vj p 2 2 2 t 45C, t = 10 ms Grenzlastintegral I t-value I t 26450 A s vj p 2 t 150C, t = 10 ms 18050 A s vj p Charakteristische Werte Characteristic values t = 150C, i = 300 A v Durchlaspannung forward voltage max. 1,55 V vj F F V Schleusenspannung threshold voltage 1,0 V (TO) Ersatzwiderstand slope resistance r 1,7 m T Sperrstrom reverse current t = 150C, v = V i 40 mA vj R RRM R i = 120 A, -di /dt = 100 A/s Q Nachlaufladung lag charge 25 As FM F S Isolations-Prfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. V 2,5 kV ISOL Thermische Eigenschaften Thermal properties R Innerer Wrmewiderstand thermal resistance, junction =180el. sin: pro Modul/per module 0,235 C/W thJC to case pro Zweig/per arm 0,47 C/W DC: pro Modul/per module 0,240 C/W pro Zweig/per arm 0,480 C/W bergangs-Wrmewiderstand thermal resistance, case to heatsink pro Modul/per module R 0,08 C/W thCK pro Zweig/per arm 0,16 C/W t Hchstzul.Sperrschichttemperatur max. junction temperature 150 C vj max t Betriebstemperatur operating temperature -40...+150 C c op Lagertemperatur storage temperature t -40...+150 C stg Mechanische Eigenschaften Mechanical properties Innere Isolation internal insulation AIN Anzugsdrehmomente tightening torques mechanische Befestigung mounting torque Toleranz/tolerance +/- 15% M1 4 Nm elektrische Anschlsse terminal connection torque Toleranz/tolerance +5%/-10% M2 4 Nm Gewicht weight G typ. 200 g Kriechstrecke creepage distance 14 mm Schwingfestigkeit vibration resistance f = 50 Hz 5 9,81 m/s

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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