Product Information

DD82S10K

DD82S10K electronic component of Infineon

Datasheet
Discrete Semiconductor Modules 1000V 150A

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

DD82S10K
Infineon

1 : USD 104.9688
5 : USD 103.0348
10 : USD 100.011
25 : USD 96.688
100 : USD 93.2153
250 : USD 88.7063
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

DD82S10K
Infineon

1 : USD 90.025
N/A

Obsolete
     
Manufacturer
Product Category
Mounting
Case
Electrical Mounting
Semiconductor Structure
Type Of Module
Max Load Current
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
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European Power- Semiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 82 S M5x11 Z4-1 15,5 20 20 80 92 AK K A March 1998DD 82 S Elektrische Eigenschaften Electrical properties Hchstzulssige Werte Maximum rated values 100 600 800 Periodische Spitzensperrspannung repetitive peak reverse voltage t = -40C...t V V vj vj max RRM 1000 100 600 800 t = +25C...t V = V Stospitzenspannung non-repetitive peak reverse voltage V vj vj max RSM RRM 1000 Durchlastrom-Grenzeffektivwert RMS forward current I 150 A FRMSM Dauergrenzstrom average forward current t = 100C I 81 A c FAVM t = 88C 96 A c I Stostrom-Grenzwert surge current t 45C, t = 10 ms 2300 A vj p FSM t 150C, t = 10 ms 1900 A vj p 2 2 2 t 45C, t = 10 ms Grenzlastintegral I t-value I t 26450 A s vj p 2 t 150C, t = 10 ms 18050 A s vj p Charakteristische Werte Characteristic values t = 150C, i = 300 A v Durchlaspannung forward voltage max. 1,55 V vj F F V Schleusenspannung threshold voltage 1,0 V (TO) Ersatzwiderstand slope resistance r 1,7 m T Sperrstrom reverse current t = 150C, v = V i 40 mA vj R RRM R i = 120 A, -di /dt = 100 A/s Q Nachlaufladung lag charge 25 As FM F S Isolations-Prfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. V 2,5 kV ISOL Thermische Eigenschaften Thermal properties R Innerer Wrmewiderstand thermal resistance, junction =180el. sin: pro Modul/per module 0,235 C/W thJC to case pro Zweig/per arm 0,47 C/W DC: pro Modul/per module 0,240 C/W pro Zweig/per arm 0,480 C/W bergangs-Wrmewiderstand thermal resistance, case to heatsink pro Modul/per module R 0,08 C/W thCK pro Zweig/per arm 0,16 C/W t Hchstzul.Sperrschichttemperatur max. junction temperature 150 C vj max t Betriebstemperatur operating temperature -40...+150 C c op Lagertemperatur storage temperature t -40...+150 C stg Mechanische Eigenschaften Mechanical properties Innere Isolation internal insulation AIN Anzugsdrehmomente tightening torques mechanische Befestigung mounting torque Toleranz/tolerance +/- 15% M1 4 Nm elektrische Anschlsse terminal connection torque Toleranz/tolerance +5%/-10% M2 4 Nm Gewicht weight G typ. 200 g Kriechstrecke creepage distance 14 mm Schwingfestigkeit vibration resistance f = 50 Hz 5 9,81 m/s

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
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Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
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INTERNATIONAL RECTIFIER
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INTL RECTIFIER
IR
IRH
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SPANSION

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