Product Information

FD400R12KE3

FD400R12KE3 electronic component of Infineon

Datasheet
Infineon Technologies IGBT Modules N-CH 1.2KV 580A

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 195.891 ea
Line Total: USD 195.891

19 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

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FD400R12KE3
Infineon

1 : USD 195.9255
10 : USD 190.946

     
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Continuous Collector Current at 25 C
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Package / Case
Brand
Mounting Style
Maximum Gate Emitter Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
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/ Technical Information IGBT- FD400R12KE3 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT, - / IGBT, Brake-Chopper / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 80C, T = 150C I 400 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 580 A t = 1 ms I 800 A P CRM Repetitive peak collector current T = 25C, T = 150 P 2000 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 400 A, V = 15 V T = 25C 1,70 2,15 V C GE vj V CE sat Collector-emitter saturation voltage I = 400 A, V = 15 V T = 125C 2,00 V C GE vj IC = 16,0 mA, VCE = VGE, Tvj = 25C VGEth 5,0 5,8 6,5 V Gate threshold voltage V = -15 V ... +15 V Q 3,70 C GE G Gate charge Tvj = 25C RGint 1,9 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 28,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,10 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 400 A, VCE = 600 V Tvj = 25C 0,25 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,30 s GE vj RGon = 1,8 () IC = 400 A, VCE = 600 V Tvj = 25C 0,09 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj RGon = 1,8 () IC = 400 A, VCE = 600 V Tvj = 25C 0,55 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,65 s GE vj RGoff = 1,8 () IC = 400 A, VCE = 600 V Tvj = 25C 0,13 s t f Fall time, inductive load V = 15 V T = 125C 0,18 s GE vj RGoff = 1,8 () IC = 400 A, VCE = 600 V, LS = 80 nH Tvj = 25C 17,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 6000 A/s T = 125C E 25,0 mJ GE vj on RGon = 1,8 ( IC = 400 A, VCE = 600 V, LS = 80 nH Tvj = 25C 42,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 4000 V/s T = 125C E 62,0 mJ GE vj off RGoff = 1,8 VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 1600 A CEmax CES sCE P vj IGBT / per IGBT R 0,062 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,03 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 3.0 1 / Technical Information IGBT- FD400R12KE3 IGBT-modules - / Diode, Brake-Chopper / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 400 A F Continuous DC forward current t = 1 ms I 800 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 34000 As R P vj It - value / Characteristic Values min. typ. max. I = 400 A, V = 0 V T = 25C 1,65 2,15 V F GE vj VF Forward voltage I = 400 A, V = 0 V T = 125C 1,65 V F GE vj I = 400 A, - di /dt = 6000 A/s (T =125C) T = 25C 400 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 480 A R vj RM I = 400 A, - di /dt = 6000 A/s (T =125C) T = 25C 44,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 80,0 C R vj r I = 400 A, - di /dt = 6000 A/s (T =125C) T = 25C 20,0 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 37,0 mJ R vj rec / per diode R 0,11 K/W thJC Thermal resistance, junction to case / per diode RthCH 0,06 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions / Diode, Reverse / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 400 A F Continuous DC forward current t = 1 ms I 800 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 34000 As R P vj It - value / Characteristic Values min. typ. max. I = 400 A, V = 0 V T = 25C 1,65 2,15 V F GE vj V F Forward voltage I = 400 A, V = 0 V T = 125C 1,65 V F GE vj / per diode RthJC 0,11 K/W Thermal resistance, junction to case / per diode R 0,06 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 125 C Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 3.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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