Technische Information / Technical Information IGBT-Modul FF1000R17IE4DP B2 IGBT-Module PrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode PrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES I = 1000A / I = 2000A C nom CRM Typische Anwendungen Typical Applications Traktionsumrichter Traction drives Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Hohe Kurzschlussrobustheit High short-circuit capability Hohe Stostromfestigkeit High surge current capability Hohe Stromdichte High current density Niedrige Schaltverluste Low switching losses Tvj op = 150C Tvj op = 150C V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Verstrkte Diode fr Rckspeisebetrieb Enlarged diode for regenerative operation Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Hohe Last- und thermische Wechselfestigkeit High power and thermal cycling capability Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor RoHS konform RoHS compliant Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: SM date of publication: 2016-09-07 approved by: RN revision: V3.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FF1000R17IE4DP B2 IGBT-Module IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 55C, T = 175C I 1000 A H vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 2000 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 1000 A, V = 15 V T = 25C 2,00 2,45 V C GE vj Collector-emitter saturation voltage I = 1000 A, V = 15 V T = 125C V 2,35 2,80 V C GE vj CE sat IC = 1000 A, VGE = 15 V Tvj = 150C 2,45 3,00 V Gate-Schwellenspannung IC = 36,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 10,0 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,8 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 81,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,60 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1700 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 1000 A, VCE = 900 V Tvj = 25C 0,66 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,70 s GE vj RGon = 0,3 Tvj = 150C 0,71 s Anstiegszeit, induktive Last IC = 1000 A, VCE = 900 V Tvj = 25C 0,10 s t r Rise time, inductive load V = 15 V T = 125C 0,11 s GE vj RGon = 0,3 Tvj = 150C 0,12 s Abschaltverzgerungszeit, induktive Last IC = 1000 A, VCE = 900 V Tvj = 25C 1,15 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,30 s GE vj RGoff = 1,2 Tvj = 150C 1,35 s Fallzeit, induktive Last IC = 1000 A, VCE = 900 V Tvj = 25C 0,25 s t f Fall time, inductive load V = 15 V T = 125C 0,48 s GE vj RGoff = 1,2 Tvj = 150C 0,56 s Einschaltverlustenergie pro Puls IC = 1000 A, VCE = 900 V, LS = 30 nH Tvj = 25C 260 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 8900 A/s (T = 150C) T = 125C E 365 mJ GE vj vj on RGon = 0,3 Tvj = 150C 415 mJ Abschaltverlustenergie pro Puls IC = 1000 A, VCE = 900 V, LS = 30 nH Tvj = 25C 210 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 2800 V/s (T = 150C)T = 125C E 315 mJ GE vj vj off RGoff = 1,2 Tvj = 150C 345 mJ Kurzschluverhalten VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 150C 4000 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 38,2 K/kW Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: SM date of publication: 2016-09-07 approved by: RN revision: V3.0 2