FF3MR12KM1 62mm C-Serien Modul mit CoolSiC Trench MOSFET 62mm C-Series module with CoolSiC Trench MOSFET Vorlufige Daten / Preliminary Data V = 1200V DSS I = 375A / I = 750A D nom DRM Potentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler DC/DC converter Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Hohe Stromdichte High current density Niedrige Schaltverluste Low switching losses Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.0 www.infineon.com 2020-04-28FF3MR12KM1 Vorlufige Daten Preliminary Data MOSFET / MOSFET Hchstzulssige Werte / Maximum Rated Values Drain-Source-Spannung T = 25C V 1200 V vj DSS Drain-source voltage Drain-Gleichstrom Tvj = 175C, VGS = 15 V TC = 80C ID nom 375 A DC drain current Gepulster Drainstrom verifiziert durch Design, t p limitiert durch Tvjmax I 750 A D pulse Pulsed drain current verified by design, t limited by T p vjmax Gate-Source Spannung VGSS -10 / 20 V Gate-source voltage Charakteristische Werte / Characteristic Values min. typ. max. Einschaltwiderstand ID = 375 A Tvj = 25C 2,83 Drain-source on resistance V = 15 V T = 125C R 3,92 m GS vj DS on Tvj = 150C 4,33 Gate-Schwellenspannung ID = 168 mA, V DS = VGS , Tvj = 25C VGS(th) 3,45 4,50 5,15 V Gate threshold voltage (tested after 1ms pulse at V = +20 V) GS Gesamt Gateladung V = -5 V / 15 V, V = 800 V Q 1,00 C GS DS G Total gate charge Interner Gatewiderstand Tvj = 25C RGint 1,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C vj C 29,8 nF iss Input capacitance VDS = 25 V, VGS = 0 V Ausgangskapazitt f = 1 MHz, T = 25C vj Coss 1,65 nF Output capacitance V = 25 V, V = 0 V DS GS Rckwirkungskapazitt f = 1 MHz, T = 25C vj C 0,227 nF rss Reverse transfer capacitance V = 25 V, V = 0 V DS GS C Speicherenergie T = 25C OSS vj Eoss 660 J C stored energy V = 25 V, V = -5 V / 15 V OSS DS GS Drain-Source-Reststrom V = 1200 V, V = -5 V T = 25C I 5,40 520 A DS GS vj DSS Zero gate voltage drain current Gate-Source-Reststrom V = 0 V V = 20 V 400 DS GS IGSS nA Gate-source leakage current Tvj = 25C VGS = -10 V Einschaltverzgerungszeit, induktive Last ID = 375 A, VDS = 600 V Tvj = 25C 79,4 Turn on delay time, inductive load V = -5 V / 15 V T = 125C t 71,6 ns GS vj d on R = 4,30 T = 150C 71,6 Gon vj Anstiegszeit, induktive Last ID = 375 A, VDS = 600 V Tvj = 25C 198 Rise time, inductive load V = -5 V / 15 V T = 125C t 219 ns GS vj r R = 4,30 T = 150C 219 Gon vj Abschaltverzgerungszeit, induktive Last ID = 375 A, VDS = 600 V Tvj = 25C 69,3 Turn off delay time, inductive load V = -5 V / 15 V T = 125C t 60,4 ns GS vj d off R = 3,60 T = 150C 60,4 Goff vj Fallzeit, induktive Last ID = 375 A, VDS = 600 V Tvj = 25C 51,5 Fall time, inductive load V = -5 V / 15 V T = 125C t 46,8 ns GS vj f R = 3,60 T = 150C 46,8 Goff vj Einschaltverlustenergie pro Puls ID = 375 A, VDS = 600 V, L = 10 nH Tvj = 25C 18,5 Turn-on energy loss per pulse di/dt = 7,05 kA/s (T = 150C) T = 125C E 16,0 mJ vj vj on V = -5 V / 15 V, R = 4,30 T = 150C 16,0 GS Gon vj Abschaltverlustenergie pro Puls ID = 375 A, VDS = 600 V, L = 10 nH Tvj = 25C 13,0 Turn-off energy loss per pulse du/dt = 7,67 kV/s (T = 150C) T = 125C E 13,5 mJ vj vj off V = -5 V / 15 V, R = 3,60 T = 150C 13,5 GS Goff vj Wrmewiderstand, Chip bis Gehuse pro MOSFET / per MOSFET R 0,113 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro MOSFET / per MOSFET RthCH 0,0320 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Body Diode / Body diode Hchstzulssige Werte / Maximum Rated Values Body Diode-Gleichstrom T = 175C, V = -5 V T = 80C I 120 A vj GS C SD DC body diode forward current Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 375 A, V = -5 V T = 25C 4,60 5,65 SD GS vj Forward voltage I = 375 A, V = -5 V T = 125C V 4,35 V SD GS vj SD I = 375 A, V = -5 V T = 150C 4,30 SD GS vj Datasheet 2 V 2.0 2020-04-28