FF2MR12KM1P 62mm C-Serien Modul mit CoolSiC Trench MOSFET und bereits aufgetragenem Thermal Interface Material 62mm C-Series module with CoolSiC Trench MOSFET and pre-applied Thermal Interface Material Vorlufige Daten / Preliminary Data V = 1200V DSS I = 500A / I = 1000A D nom DRM Potentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler DC/DC converter Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Hohe Stromdichte High current density Niedrige Schaltverluste Low switching losses Mechanische Eigenschaften Mechanical Features Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.0 www.infineon.com 2020-05-11FF2MR12KM1P Vorlufige Daten Preliminary Data MOSFET / MOSFET Hchstzulssige Werte / Maximum Rated Values Drain-Source-Spannung T = 25C V 1200 V vj DSS Drain-source voltage Drain-Gleichstrom Tvj = 175C, VGS = 15 V TH = 60C ID nom 500 A DC drain current Gepulster Drainstrom verifiziert durch Design, t p limitiert durch Tvjmax I 1000 A D pulse Pulsed drain current verified by design, t limited by T p vjmax Gate-Source Spannung VGSS -10 / 20 V Gate-source voltage Charakteristische Werte / Characteristic Values min. typ. max. Einschaltwiderstand ID = 500 A Tvj = 25C 2,13 Drain-source on resistance V = 15 V T = 125C R 2,94 m GS vj DS on Tvj = 150C 3,25 Gate-Schwellenspannung ID = 224 mA, V DS = VGS , Tvj = 25C VGS(th) 3,45 4,50 5,15 V Gate threshold voltage (tested after 1ms pulse at V = +20 V) GS Gesamt Gateladung V = -5 V / 15 V, V = 800 V Q 1,34 C GS DS G Total gate charge Interner Gatewiderstand Tvj = 25C RGint 0,8 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C vj C 39,7 nF iss Input capacitance VDS = 800 V, VGS = 0 V Ausgangskapazitt f = 1 MHz, T = 25C vj Coss 2,20 nF Output capacitance V = 800 V, V = 0 V DS GS Rckwirkungskapazitt f = 1 MHz, T = 25C vj C 0,302 nF rss Reverse transfer capacitance V = 800 V, V = 0 V DS GS C Speicherenergie T = 25C OSS vj Eoss 880 J C stored energy V = 800 V, V = -5 / 15 V OSS DS GS Drain-Source-Reststrom V = 1200 V, V = -5 V T = 25C I 7,20 660 A DS GS vj DSS Zero gate voltage drain current Gate-Source-Reststrom V = 0 V V = 20 V 400 DS GS IGSS nA Gate-source leakage current Tvj = 25C VGS = -10 V Einschaltverzgerungszeit, induktive Last ID = 500 A, VDS = 600 V Tvj = 25C 83,4 Turn on delay time, inductive load V = -5 / 15 V T = 125C t 69,0 ns GS vj d on R = 4,30 T = 150C 69,0 Gon vj Anstiegszeit, induktive Last ID = 500 A, VDS = 600 V Tvj = 25C 82,2 Rise time, inductive load V = -5 / 15 V T = 125C t 72,1 ns GS vj r R = 4,30 T = 150C 72,1 Gon vj Abschaltverzgerungszeit, induktive Last ID = 500 A, VDS = 600 V Tvj = 25C 22,0 Turn off delay time, inductive load V = -5 / 15 V T = 125C t 24,1 ns GS vj d off R = 3,30 T = 150C 24,1 Goff vj Fallzeit, induktive Last ID = 500 A, VDS = 600 V Tvj = 25C 53,0 Fall time, inductive load V = -5 / 15 V T = 125C t 51,6 ns GS vj f R = 3,30 T = 150C 51,6 Goff vj Einschaltverlustenergie pro Puls ID = 500 A, VDS = 600 V, L = 10 nH Tvj = 25C 26,4 Turn-on energy loss per pulse di/dt = 7,83 kA/s (T = 150C) T = 125C E 22,9 mJ vj vj on V = -5 / 15 V, R = 4,30 T = 150C 22,9 GS Gon vj Abschaltverlustenergie pro Puls ID = 500 A, VDS = 600 V, L = 10 nH Tvj = 25C 19,6 Turn-off energy loss per pulse du/dt = 7,13 kV/s (T = 150C) T = 125C E 20,3 mJ vj vj off V = -5 / 15 V, R = 3,30 T = 150C 20,3 GS Goff vj Wrmewiderstand, Chip bis Khlkrper pro MOSFET / per MOSFET R 0,104 K/W thJH Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Body Diode / Body diode Hchstzulssige Werte / Maximum Rated Values Body Diode-Gleichstrom T = 175C, V = -5 V T = 60C I 160 A vj GS H SD DC body diode forward current Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 500 A, V = -5 V T = 25C 4,60 5,65 SD GS vj Forward voltage I = 500 A, V = -5 V T = 125C V 4,35 V SD GS vj SD ISD = 500 A, VGS = -5 V Tvj = 150C 4,30 Datasheet 2 V 2.0 2020-05-11