Technische Information / Technical Information IGBT-Modul FF400R12KT3P E IGBT-Module 62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled HE Diode und bereits aufgetragenem Thermal Interface Material 62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled HE diode and pre-applied Thermal Interface Material Vorlufige Daten / Preliminary Data V = 1200V CES I = 400A / I = 800A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Niedrige Schaltverluste Low switching losses Sehr groe Robustheit Unbeatable robustness V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive temperature coefficient Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate Standardgehuse Standard housing Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AKB date of publication: 2016-04-25 approved by: MK revision: V2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FF400R12KT3P E IGBT-Module Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 65C, T = 150C I 400 A H vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 800 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 400 A, V = 15 V T = 25C 1,70 2,15 V C GE vj VCE sat Collector-emitter saturation voltage I = 400 A, V = 15 V T = 125C 1,90 V C GE vj Gate-Schwellenspannung I = 16,0 mA, V = V , T = 25C V 5,00 5,80 6,50 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 3,70 C Gate charge Interner Gatewiderstand T = 25C R 1,9 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 28,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,10 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 400 A, V = 600 V T = 25C 0,16 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,17 s R = 1,8 Gon Anstiegszeit, induktive Last I = 400 A, V = 600 V T = 25C 0,04 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,045 s R = 1,8 Gon Abschaltverzgerungszeit, induktive Last I = 400 A, V = 600 V T = 25C 0,45 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,52 s R = 1,8 Goff Fallzeit, induktive Last I = 400 A, V = 600 V T = 25C 0,10 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,16 s R = 1,8 Goff Einschaltverlustenergie pro Puls I = 400 A, V = 600 V, L = 30 nH T = 25C 18,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 8000 A/s Tvj = 125C Eon 28,0 mJ R = 1,8 Gon Abschaltverlustenergie pro Puls I = 400 A, V = 600 V, L = 30 nH T = 25C 30,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4500 V/s Tvj = 125C Eoff 45,0 mJ R = 1,8 Goff Kurzschluverhalten V 15 V, V = 900 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 125C 1600 A Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT R 0,0847 K/W thJH Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: AKB date of publication: 2016-04-25 approved by: MK revision: V2.0 2