FF450R12ME4P B11 EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / bereits aufgetragenem Thermal Interface Material EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / pre-applied Thermal Interface Material V = 1200V CES I = 450A / I = 900A C nom CRM Typische Anwendungen Typical Applications Motorantriebe Motor drives Servoumrichter Servo drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Niedriges V Low V CEsat CEsat T = 150C T = 150C vj op vj op Mechanische Eigenschaften Mechanical Features PressFIT Verbindungstechnik PressFIT contact technology Standardgehuse Standard housing Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-04-03FF450R12ME4P B11 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 55C, Tvj max = 175C IC nom 450 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 900 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 450 A, VGE = 15 V Tvj = 25C 1,75 2,10 V Collector-emitter saturation voltage I = 450 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat IC = 450 A, VGE = 15 V Tvj = 150C 2,05 V Gate-Schwellenspannung IC = 17,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 3,30 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,7 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 28,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,55 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 450 A, VCE = 600 V Tvj = 25C 0,19 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,22 s GE vj R = 1,3 T = 150C 0,22 s Gon vj Anstiegszeit, induktive Last IC = 450 A, VCE = 600 V Tvj = 25C 0,06 s t r Rise time, inductive load V = 15 V T = 125C 0,07 s GE vj R = 1,3 T = 150C 0,07 s Gon vj Abschaltverzgerungszeit, induktive Last I = 450 A, V = 600 V T = 25C 0,49 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,58 s GE vj R = 1,3 T = 150C 0,62 s Goff vj Fallzeit, induktive Last I = 450 A, V = 600 V T = 25C 0,08 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,11 s GE vj R = 1,3 T = 150C 0,12 s Goff vj Einschaltverlustenergie pro Puls I = 450 A, V = 600 V, L = 35 nH T = 25C 15,0 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 7000 A/s (T = 150C) T = 125C E 26,0 mJ GE vj vj on R = 1,3 T = 150C 28,5 mJ Gon vj Abschaltverlustenergie pro Puls I = 450 A, V = 600 V, L = 35 nH T = 25C 38,0 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3100 V/s (T = 150C)T = 125C E 55,5 mJ GE vj vj off R = 1,3 T = 150C 61,5 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 1800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 0,104 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2017-04-03