FF6MR12KM1 62mm C-Serien Modul mit CoolSiC Trench MOSFET 62mm C-Series module with CoolSiC Trench MOSFET Vorlufige Daten / Preliminary Data V = 1200V DSS I = 250A / I = 500A D nom DRM Potentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler DC/DC converter Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Hohe Stromdichte High current density Niedrige Schaltverluste Low switching losses Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.0 www.infineon.com 2020-04-29FF6MR12KM1 Vorlufige Daten Preliminary Data MOSFET / MOSFET Hchstzulssige Werte / Maximum Rated Values Drain-Source-Spannung T = 25C V 1200 V vj DSS Drain-source voltage Drain-Gleichstrom Tvj = 175C, VGS = 15 V TC = 65C ID nom 250 A DC drain current Gepulster Drainstrom verifiziert durch Design, t p limitiert durch Tvjmax I 500 A D pulse Pulsed drain current verified by design, t limited by T p vjmax Gate-Source Spannung VGSS -10 / 20 V Gate-source voltage Charakteristische Werte / Characteristic Values min. typ. max. Einschaltwiderstand ID = 250 A Tvj = 25C 5,81 Drain-source on resistance V = 15 V T = 125C R 7,56 m GS vj DS on Tvj = 150C 8,50 Gate-Schwellenspannung ID = 80,0 mA, V DS = VGS , Tvj = 25C VGS(th) 3,45 4,50 5,15 V Gate threshold voltage (tested after 1ms pulse at V = +20 V) GS Gesamt Gateladung V = -5 V / 15 V, V = 800 V Q 0,496 C GS DS G Total gate charge Interner Gatewiderstand Tvj = 25C RGint 1,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C vj C 14,7 nF iss Input capacitance VDS = 800 V, VGS = 0 V Ausgangskapazitt f = 1 MHz, T = 25C vj Coss 0,88 nF Output capacitance V = 800 V, V = 0 V DS GS Rckwirkungskapazitt f = 1 MHz, T = 25C vj C 0,112 nF rss Reverse transfer capacitance V = 800 V, V = 0 V DS GS C Speicherenergie T = 25C OSS vj Eoss 352 J C stored energy V = 800 V, V = -5 V / 15 V OSS DS GS Drain-Source-Reststrom V = 1200 V, V = -5 V T = 25C I 0,80 660 A DS GS vj DSS Zero gate voltage drain current Gate-Source-Reststrom V = 0 V V = 20 V 400 DS GS IGSS nA Gate-source leakage current Tvj = 25C VGS = -10 V Einschaltverzgerungszeit, induktive Last ID = 250 A, VDS = 600 V Tvj = 25C 69,1 Turn on delay time, inductive load V = -5 V / 15 V T = 125C t 66,4 ns GS vj d on R = 3,00 T = 150C 65,5 Gon vj Anstiegszeit, induktive Last ID = 250 A, VDS = 600 V Tvj = 25C 33,7 Rise time, inductive load V = -5 V / 15 V T = 125C t 32,0 ns GS vj r R = 3,00 T = 150C 31,9 Gon vj Abschaltverzgerungszeit, induktive Last ID = 250 A, VDS = 600 V Tvj = 25C 124 Turn off delay time, inductive load V = -5 V / 15 V T = 125C t 134 ns GS vj d off R = 3,90 T = 150C 134 Goff vj Fallzeit, induktive Last ID = 250 A, VDS = 600 V Tvj = 25C 43,9 Fall time, inductive load V = -5 V / 15 V T = 125C t 45,2 ns GS vj f R = 3,90 T = 150C 45,2 Goff vj Einschaltverlustenergie pro Puls ID = 250 A, VDS = 600 V, L = 10 nH Tvj = 25C 4,26 Turn-on energy loss per pulse di/dt = 8,95 kA/s (T = 150C) T = 125C E 4,75 mJ vj vj on V = -5 V / 15 V, R = 3,00 T = 150C 4,95 GS Gon vj Abschaltverlustenergie pro Puls ID = 250 A, VDS = 600 V, L = 10 nH Tvj = 25C 5,72 Turn-off energy loss per pulse du/dt = 12,9 kV/s (T = 150C) T = 125C E 5,99 mJ vj vj off V = -5 V / 15 V, R = 3,90 T = 150C 5,99 GS Goff vj Wrmewiderstand, Chip bis Gehuse pro MOSFET / per MOSFET R 0,141 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro MOSFET / per MOSFET RthCH 0,0490 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Body Diode / Body diode Hchstzulssige Werte / Maximum Rated Values Body Diode-Gleichstrom T = 175C, V = -5 V T = 65C I 110 A vj GS C SD DC body diode forward current Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 250 A, V = -5 V T = 25C 4,80 5,85 SD GS vj Forward voltage I = 250 A, V = -5 V T = 125C V 4,55 V SD GS vj SD I = 250 A, V = -5 V T = 150C 4,50 SD GS vj Datasheet 2 V 2.0 2020-04-29