/TechnicalInformation
IGBT-
FP100R12KT4
IGBT-modules
EconoPIM3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode
EconoPIM3modulewithtrench/fieldstopIGBT4andEmitterControlled4diode
IGBT,/IGBT,Inverter PreliminaryData
/MaximumRatedValues
T = 25C V 1200 V
vj CES
Collector-emittervoltage
T = 95C, T = 175C I 100 A
C vj max C nom
ContinuousDCcollectorcurrent
t = 1 ms I 200 A
P CRM
Repetitivepeakcollectorcurrent
T = 25C, T = 175C P 515 W
C vj max tot
Totalpowerdissipation
VGES +/-20 V
Gate-emitterpeakvoltage
/CharacteristicValues min. typ. max.
I = 100 A, V = 15 V T = 25C 1,75 2,20 V
C GE vj
Collector-emittersaturationvoltage I = 100 A, V = 15 V T = 125C V 2,05 V
C GE vj CE sat
I = 100 A, V = 15 V T = 150C 2,10 V
C GE vj
I = 3,80 mA, V = V , T = 25C V 5,2 5,8 6,4 V
C CE GE vj GEth
Gatethresholdvoltage
VGE = -15 V ... +15 V QG 0,80 C
Gatecharge
T = 25C R 7,5
vj Gint
Internalgateresistor
f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,30 nF
Inputcapacitance
f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,27 nF
vj CE GE res
Reversetransfercapacitance
-
VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA
Collector-emittercut-offcurrent
-
V = 0 V, V = 20 V, T = 25C I 100 nA
CE GE vj GES
Gate-emitterleakagecurrent
() I = 100 A, V = 600 V T = 25C 0,16 s
C CE vj
t
d on
Turn-ondelaytime,inductiveload VGE = 15 V Tvj = 125C 0,17 s
R = 1,6 T = 150C 0,17 s
Gon vj
() I = 100 A, V = 600 V T = 25C 0,03 s
C CE vj
t
r
Risetime,inductiveload VGE = 15 V Tvj = 125C 0,04 s
R = 1,6 T = 150C 0,04 s
Gon vj
() I = 100 A, V = 600 V T = 25C 0,33 s
C CE vj
t
d off
Turn-offdelaytime,inductiveload VGE = 15 V Tvj = 125C 0,43 s
R = 1,6 T = 150C 0,45 s
Goff vj
() I = 100 A, V = 600 V T = 25C 0,08 s
C CE vj
t
f
Falltime,inductiveload VGE = 15 V Tvj = 125C 0,15 s
R = 1,6 T = 150C 0,17 s
Goff vj
() I = 100 A, V = 600 V, L = 40 nH T = 25C 5,50 mJ
C CE S vj
Turn-onenergylossperpulse VGE = 15 V, di/dt = 3000 A/s (Tvj = 150C) Tvj = 125C Eon 8,50 mJ
R = 1,6 T = 150C 9,50 mJ
Gon vj
( I = 100 A, V = 600 V, L = 40 nH T = 25C 5,50 mJ
C CE S vj
Turn-offenergylossperpulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 8,50 mJ
R = 1,6 T = 150C 9,50 mJ
Goff vj
V 15 V, V = 900 V
GE CC
ISC
SCdata VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 400 A
IGBT/perIGBT R 0,29 K/W
thJC
Thermalresistance,junctiontocase
IGBT/perIGBT
R 0,13 K/W
thCH
Thermalresistance,casetoheatsink Paste=1W/(mK)/grease=1W/(mK)
T -40 150 C
vj op
Temperatureunderswitchingconditions
preparedby:AS dateofpublication:2013-11-04
approvedby:RS revision:2.0
1/TechnicalInformation
IGBT-
FP100R12KT4
IGBT-modules
PreliminaryData
,/Diode,Inverter
/MaximumRatedValues
T = 25C V 1200 V
vj RRM
Repetitivepeakreversevoltage
I 100 A
F
ContinuousDCforwardcurrent
t = 1 ms I 200 A
P FRM
Repetitivepeakforwardcurrent
I2t- V = 0 V, t = 10 ms, T = 125C 1550 As
R P vj
It
It-value VR = 0 V, tP = 10 ms, Tvj = 150C 1500 As
/CharacteristicValues min. typ. max.
I = 100 A, V = 0 V T = 25C 1,70 2,15 V
F GE vj
Forwardvoltage I = 100 A, V = 0 V T = 125C V 1,65 V
F GE vj F
IF = 100 A, VGE = 0 V Tvj = 150C 1,65 V
I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 115 A
F F vj vj
Peakreverserecoverycurrent V = 600 V T = 125C I 125 A
R vj RM
VGE = -15 V Tvj = 150C 130 A
I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 9,50 C
F F vj vj
Recoveredcharge V = 600 V T = 125C Q 17,5 C
R vj r
VGE = -15 V Tvj = 150C 20,5 C
I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 3,50 mJ
F F vj vj
Reverserecoveryenergy V = 600 V T = 125C E 6,00 mJ
R vj rec
VGE = -15 V Tvj = 150C 7,50 mJ
/perdiode RthJC 0,50 K/W
Thermalresistance,junctiontocase
/perdiode
R 0,225 K/W
thCH
Thermalresistance,casetoheatsink =1W/(mK)/ =1W/(mK)
Paste grease
Tvj op -40 150 C
Temperatureunderswitchingconditions
,/Diode,Rectifier
/MaximumRatedValues
T = 25C V 1600 V
vj RRM
Repetitivepeakreversevoltage
()
TC = 80C IFRMSM 100 A
MaximumRMSforwardcurrentperchip
T = 80C I 150 A
C RMSM
MaximumRMScurrentatrectifieroutput
t = 10 ms, T = 25C 1150 A
p vj
I
FSM
Surgeforwardcurrent tp = 10 ms, Tvj = 150C 880 A
I2t- tp = 10 ms, Tvj = 25C 6600 As
It
It-value t = 10 ms, T = 150C 3850 As
p vj
/CharacteristicValues min. typ. max.
T = 150C, I = 100 A V 1,00 V
vj F F
Forwardvoltage
Tvj = 150C, VR = 1600 V IR 1,00 mA
Reversecurrent
/perdiode R 0,40 K/W
thJC
Thermalresistance,junctiontocase
/perdiode
RthCH 0,18 K/W
Thermalresistance,casetoheatsink Paste=1W/(mK)/grease=1W/(mK)
T -40 150 C
vj op
Temperatureunderswitchingconditions
preparedby:AS dateofpublication:2013-11-04
approvedby:RS revision:2.0
2