FP10R12W1T4P EasyPIM Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC / TIM EasyPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC / TIM V = 1200V CES I = 10A / I = 20A C nom CRM Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary inverters Klimaanlagen Air conditioning Motorantriebe Motor drives Elektrische Eigenschaften Electrical Features Niedrige Schaltverluste Low switching losses Niedriges V Low V CEsat CEsat Trench IGBT 4 Trench IGBT 4 V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Al2O3 Substrat mit kleinem thermischen Al2O 3 substrate with low thermal resistance Widerstand Kompaktes Design Compact design Ltverbindungstechnik Solder contact technology Robuste Montage durch integrierte Rugged mounting due to integrated mounting Befestigungsklammern clamps Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-05-04FP10R12W1T4P IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 100C, Tvj max = 175C IC nom 10 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 20 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 10 A, VGE = 15 V Tvj = 25C 1,85 2,25 V Collector-emitter saturation voltage I = 10 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat IC = 10 A, VGE = 15 V Tvj = 150C 2,25 V Gate-Schwellenspannung IC = 0,30 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,09 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,60 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,024 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 10 A, VCE = 600 V Tvj = 25C 0,045 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,045 s GE vj R = 47 T = 150C 0,045 s Gon vj Anstiegszeit, induktive Last IC = 10 A, VCE = 600 V Tvj = 25C 0,044 s t r Rise time, inductive load V = 15 V T = 125C 0,061 s GE vj R = 47 T = 150C 0,063 s Gon vj Abschaltverzgerungszeit, induktive Last I = 10 A, V = 600 V T = 25C 0,18 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,245 s GE vj R = 47 T = 150C 0,275 s Goff vj Fallzeit, induktive Last I = 10 A, V = 600 V T = 25C 0,165 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,215 s GE vj R = 47 T = 150C 0,225 s Goff vj Einschaltverlustenergie pro Puls I = 10 A, V = 600 V, L = 50 nH T = 25C 0,90 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 500 A/s (T = 150C) T = 125C E 1,35 mJ GE vj vj on R = 47 T = 150C 1,55 mJ Gon vj Abschaltverlustenergie pro Puls I = 10 A, V = 600 V, L = 50 nH T = 25C 0,55 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3500 V/s (T = 150C)T = 125C E 0,80 mJ GE vj vj off R = 47 T = 150C 0,87 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 35 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 1,89 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2017-05-04