FS35R12W1T7 B11 EasyPACK Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und PressFIT / NTC EasyPACK module with TRENCHSTOPIGBT7 and Emitter Controlled 7 diode and PressFIT / NTC Vorlufige Daten / Preliminary Data V = 1200V CES IC nom = 35A / ICRM = 70A Potentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Klimaanlagen Air conditioning Motorantriebe Motor drives Servoumrichter Servo drives USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Niedriges V Low V CEsat CEsat TM TM Trenchstop IGBT7 Trenchstop IGBT7 berlastbetrieb bis zu 175C Overload operation up to 175C Mechanische Eigenschaften Mechanical Features 2,5 kV AC 1min Isolationsfestigkeit 2.5 kV AC 1min insulation Al O Substrat mit kleinem thermischen Al O substrate with low thermal resistance 2 3 2 3 Widerstand Hohe Leistungsdichte High power density Kompaktes Design Compact design PressFIT Verbindungstechnik PressFIT contact technology Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.0 www.infineon.com 2019-10-30FS35R12W1T7 B11 Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 65C, Tvj max = 175C ICDC 35 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 70 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 35 A Tvj = 25C 1,60 t.b.d. V Collector-emitter saturation voltage V = 15 V T = 125C V 1,74 V GE vj CE sat Tvj = 175C 1,82 V Gate-Schwellenspannung IC = 0,75 mA, VCE = VGE, Tvj = 25C VGEth 5,15 5,80 6,45 V Gate threshold voltage Gateladung V = -15 / 15 V, V = 600 V Q 0,548 C GE CE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,0 Internal gate resistor Eingangskapazitt f = 100 kHz, T = 25C, V = 25 V, V = 0 V C 6,62 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,023 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 0,0073 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 35 A, VCE = 600 V Tvj = 25C 0,037 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,043 s GE vj R = 5,6 T = 175C 0,044 s Gon vj Anstiegszeit, induktive Last IC = 35 A, VCE = 600 V Tvj = 25C 0,035 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,037 s GE vj R = 5,6 T = 175C 0,038 s Gon vj Abschaltverzgerungszeit, induktive Last I = 35 A, V = 600 V T = 25C 0,26 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,32 s GE vj R = 5,6 T = 175C 0,34 s Goff vj Fallzeit, induktive Last I = 35 A, V = 600 V T = 25C 0,14 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,24 s GE vj R = 5,6 T = 175C 0,30 s Goff vj Einschaltverlustenergie pro Puls I = 35 A, V = 600 V, L = 35 nH T = 25C 2,62 mJ C CE vj Turn-on energy loss per pulse di/dt = 700 A/s (T = 175C) T = 125C E 3,74 mJ vj vj on V = -15 / 15 V, R = 5,6 T = 175C 4,45 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 35 A, V = 600 V, L = 35 nH T = 25C 2,39 mJ C CE vj Turn-off energy loss per pulse du/dt = 3300 V/s (T = 175C) T = 125C E 3,73 mJ vj vj off V = -15 / 15 V, R = 5,6 T = 175C 4,56 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 800 V t 8 s, T = 150C 110 A GE CC P vj I SC SC data V = V -L di/dt t 7 s, T = 175C 100 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 1,27 K/W Thermal resistance, junction to heatsink Temperatur im Schaltbetrieb T -40 175 C vj op Temperature under switching conditions Datasheet 2 V 2.0 2019-10-30