FZ1200R12HE4P IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und bereits aufgetragenem Thermal Interface Material IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and pre-applied Thermal Interface Material VCES = 1200V I = 1200A / I = 2400A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T vj op Extended operating temperature Tvj op Niedrige Schaltverluste Low switching losses Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Hohe Leistungsdichte High power density IHM B Gehuse IHM B housing RoHS konform RoHS compliant Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2016-10-17FZ1200R12HE4P IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 1200 A H vj max C nom Continuous DC collector current TH = 25C, Tvj max = 175C IC 1825 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 2400 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 1200 A, VGE = 15 V Tvj = 25C 1,75 2,10 V Collector-emitter saturation voltage I = 1200 A, V = 15 V T = 125C V 2,00 2,40 V C GE vj CE sat IC = 1200 A, VGE = 15 V Tvj = 150C 2,05 2,45 V Gate-Schwellenspannung IC = 45,5 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 9,25 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,6 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 74,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 4,10 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 1200 A, VCE = 600 V Tvj = 25C 0,41 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,46 s GE vj R = 1,6 T = 150C 0,46 s Gon vj Anstiegszeit, induktive Last IC = 1200 A, VCE = 600 V Tvj = 25C 0,20 s t r Rise time, inductive load V = 15 V T = 125C 0,20 s GE vj R = 1,6 T = 150C 0,20 s Gon vj Abschaltverzgerungszeit, induktive Last I = 1200 A, V = 600 V T = 25C 0,82 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,93 s GE vj R = 0,62 T = 150C 0,96 s Goff vj Fallzeit, induktive Last I = 1200 A, V = 600 V T = 25C 0,11 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,14 s GE vj R = 0,62 T = 150C 0,17 s Goff vj Einschaltverlustenergie pro Puls I = 1200 A, V = 600 V, L = 54 nH T = 25C 115 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 5900 A/s (T = 150C) T = 125C E 155 mJ GE vj vj on R = 1,6 T = 150C 175 mJ Gon vj Abschaltverlustenergie pro Puls I = 1200 A, V = 600 V, L = 54 nH T = 25C 145 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 2750 V/s (T = 150C)T = 125C E 180 mJ GE vj vj off R = 0,62 T = 150C 195 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 4800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 25,4 K/kW Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2016-10-17