X-On Electronics has gained recognition as a prominent supplier of IDK09G65C5XTMA2 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. IDK09G65C5XTMA2 Schottky Diodes & Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.
We are delighted to provide the IDK09G65C5XTMA2 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IDK09G65C5XTMA2 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.
SiC Silicon Carbide Diode th TM 5 Generation thinQ 650V SiC Schottky Diode IDK09G65C5 Final Datasheet Rev. 2.1, 2017-08-11 Power Management & Multimarket 5th Generation thinQ SiC Schottky Diode IDK09G65C5 1 Description ThinQ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal 1 characteristics and a lower figure of merit (Qc x Vf). 2 The new thinQ Generation 5 has been designed to complement our 650V CoolMOS families: this ensures meeting the most stringent application requirements in this voltage range. Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 20 mA Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit V 650 V DC Q (V = 400 V) 14 nC C R E (V = 400 V) 3.2 J C R I (T < 145C) 9 A F C Table 2 Pin Definition Pin 1 Pin 2 Pin 3 C A n.a. Type / ordering Code Package Marking Related links IDK09G65C5 PG-TO263-2 D0965C5 www.infineon.com/sic 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time period of 10 ms Final Data Sheet 2 Rev. 2.1, 2017-08-11