X-On Electronics has gained recognition as a prominent supplier of IFS100B12N3E4_B31 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. IFS100B12N3E4_B31 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

IFS100B12N3E4_B31 Infineon

IFS100B12N3E4_B31 electronic component of Infineon
IFS100B12N3E4_B31 Infineon
IFS100B12N3E4_B31 IGBT Modules
IFS100B12N3E4_B31  Semiconductors

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See Product Specifications
Part No. IFS100B12N3E4_B31
Manufacturer: Infineon
Category: IGBT Modules
Description: Infineon Technologies IGBT Modules MIPAQ BASE 1200V 100A
Datasheet: IFS100B12N3E4_B31 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 114.928 ea
Line Total: USD 114.93 
Availability - 18
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
18
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 114.928
10 : USD 104.467

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IFS100B12N3E4_B31 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IFS100B12N3E4_B31 and other electronic components in the IGBT Modules category and beyond.

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Technische Information / Technical Information IGBT-Module IFS100B12N3E4 B31 IGBT-modules MIPAQbase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current sense shunt Vorlufige Daten / Preliminary Data J V = 1200V CES I = 100A / I = 200A C nom CRM Typische Anwendungen Typical Applications Motorantriebe Motor Drives Servoumrichter Servo Drives Elektrische Eigenschaften Electrical Features Niedrige Schaltverluste Low Switching Losses Tvj op = 150C Tvj op = 150C Niedriges V Low V CEsat CEsat Mechanische Eigenschaften Mechanical Features Hohe Last- und thermische Wechselfestigkeit High Power and Thermal Cycling Capability Isolierte Bodenplatte Isolated Base Plate Kupferbodenplatte Copper Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CM date of publication: 2013-03-06 approved by: MS revision: 2.0 1Technische Information / Technical Information IGBT-Module IFS100B12N3E4 B31 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 95C, T = 175C I 100 A C vj C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 515 W C vj tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 100 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 2,05 V C GE vj Gate-Schwellenspannung I = 4,00 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,80 C Gate charge Interner Gatewiderstand T = 25C R 7,5 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,30 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,27 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,16 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,17 s R = 1,6 T = 150C 0,18 s Gon vj Anstiegszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,025 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,03 s R = 1,6 T = 150C 0,03 s Gon vj Abschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,37 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,45 s R = 1,6 T = 150C 0,48 s Goff vj Fallzeit, induktive Last I = 100 A, V = 600 V T = 25C 0,06 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,11 s R = 1,6 T = 150C 0,13 s Goff vj Einschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 40 nH T = 25C 4,00 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3700 A/s (Tvj=150C) Tvj = 125C Eon 6,50 mJ R = 1,6 T = 150C 7,50 mJ Gon vj Abschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 40 nH T = 25C 7,60 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3400 V/s (Tvj=150C) Tvj = 125C Eoff 11,0 mJ R = 1,6 T = 150C 12,5 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 400 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,29 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,086 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) prepared by: CM date of publication: 2013-03-06 approved by: MS revision: 2.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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