Product Information

IFS200V12PT4

IFS200V12PT4 electronic component of Infineon

Datasheet
Infineon Technologies IGBT Modules MIPAQ SERVE 1200V 200A

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 6
Multiples : 6

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IFS200V12PT4
Infineon

6 : USD 579.6126
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Brand
Mounting Style
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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Taric
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Technical Information MIP AQ serve IFS200V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 200A Load type Inductive, resistive Industrial drives, UPS, solar Typical application inverters, auxiliary inverters temperature, short circuit, Sensors and protection signal transmission, UVLO for all power supplies Electrical, 5V-CMOS, Interface IGBT Galvanic Isolation according to IEC61800-5-1 Standards IEC61800-5-1, UL94, RoHS prepared by: PK date of publication: 2012-05-25 approved by: KS revision: 2.1 Technical Information MIP AQ serve IFS200V12PT4 preliminary data Electrical data power part min typ max L = 30nH s DC link voltage -40 < T < 150C U 850V V vj DC 0 < I < 2*I C turn off C max IGBT continuous DC collector T = 100C case I 200 A C nom current T = T vj vjop max IGBT collector-emitter voltage T =25C U 1200 V vj CES IGBT collector-emitter T =25C I =200A 1,75 2,15 vj C U V CEsat saturation voltage T =150C I =200A 2,10 vj C Diode repetitive peak reverse T =25C U 1200 V vj RRM voltage T =25C I =200A 1,75 2,20 vj C Diode forward voltage U V F T =150C I =200A 1,65 vj C Operating junction temperature IGBT and Diode T 150 C vjop IGBT, U =600V, I =200A DC C Turn on energy loss per pulse E 21,3 mJ on T =150C, di/dt,= 3,6kA/s vj IGBT, U =600V, I =200A DC C Turn off energy loss per pulse E 20,0 mJ off Tvj=150C, du/dt = 3,5kV/s Diode, U =600V, I =200A DC F Reverse recovery energy E 24,0 mJ rec T =150C, di/dt = 3,6kA/s vj Electrical data control part Auxiliary power supply: IGBT Gate (connector X1) min typ max Voltage U 13 16 18 V GS P1,2,3,4 IGBT driver positive supply Current at f = 20kHz, IGS P1,2,3 28 mA sw U = +15V, GSP1,2,3 T = 25C vj I 41 mA GS P4 Voltage U -10 -8 -5 V GS N1,2,3,4 IGBT driver negative supply I 27 mA Current f = 20kHz, GS N1,2,3 sw U = -8V, GSN T = 25C vj I 32 mA GS N4 IGBT driver undervoltage lockout For each channel U 10,4 12,6 V GS UVLO threshold IGBT driver undervoltage lockout For each channel U 0,7 V GS UVLO H hysteresis Auxiliary power supply: Logic (connector X2) min typ max Voltage U 4,5 5 5,5 V LS Logic power supply Current fsw = 20kHz, I 55 mA LS U = +5V LS Logic power supply undervoltage U 3,5 4,3 V LS UVLO lockout threshold Logic power supply undervoltage U 0,3 V LS UVLO H lockout hysteresis prepared by: PK date of publication: 2012-05-25 approved by: KS revision: 2.1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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