IGD15N65T6ARMA1 Infineon

IGD15N65T6ARMA1 electronic component of Infineon
IGD15N65T6ARMA1 Infineon
IGD15N65T6ARMA1 IGBT Transistors
IGD15N65T6ARMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IGD15N65T6ARMA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGD15N65T6ARMA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IGD15N65T6ARMA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Trench Field Stop 650V 30A 100W Surface Mount PG-TO252-3
Datasheet: IGD15N65T6ARMA1 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8585
10$ 1.602
100$ 1.2875
500$ 1.0578
1000$ 0.8765
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8427
10$ 1.5861
100$ 1.2751
500$ 1.0476
1000$ 0.868
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 1.0595
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.7131
10$ 2.0475
100$ 1.6626
500$ 1.4096
1000$ 1.3151
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8816
10$ 1.5355
100$ 1.3409
250$ 1.276
500$ 1.1462
1000$ 1.1462
3000$ 1.0922
6000$ 1.0706
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.1358
10$ 2.7254
30$ 2.4669
100$ 2.1058
500$ 1.988
1000$ 1.9366
N/A

Obsolete
   
Manufacturer
Product Category
Package / Case
Packaging
Series
Part Status
Igbt Type
Voltage - Collector Emitter Breakdown Max
Current - Collector Ic Max
Current - Collector Pulsed Icm
Vceon Max Vge Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td On/Off 25 C
Test Condition
Operating Temperature
Mounting Type
Supplier Device Package
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IGD15N65T6ARMA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGD15N65T6ARMA1 and other electronic components in the IGBT Transistors category and beyond.

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IGP15N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology C Features: Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C G Short circuit withstand time 5s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) PG-TO220-3 Low EMI Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : IGP15N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.15 K/W t h J C junction case Thermal resistance, R 62 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =15A C E ( s a t ) GE C T =25 C - 1.5 2.05 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =210A,V =V 4.1 4.9 5.7 G E ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 1000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =15A - 8.7 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 860 - pF i s s CE V =0V, Output capacitance C - 55 - o s s GE f=1MHz Reverse transfer capacitance C - 24 - r s s Gate charge Q V =480V, I =15A - 87 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 137.5 - A C ( S C ) GE SC V = 400V, C C T = 150 C j 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.4 30.04.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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