X-On Electronics has gained recognition as a prominent supplier of IGP10N60TXKSA1 igbt transistors across the USA, India, Europe, Australia, and various other global locations. IGP10N60TXKSA1 igbt transistors are a product manufactured by Infineon. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

IGP10N60TXKSA1 Infineon

IGP10N60TXKSA1 electronic component of Infineon
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See Product Specifications
Part No.IGP10N60TXKSA1
Manufacturer: Infineon
Category:IGBT Transistors
Description: IGBT Transistors LOW LOSS IGBT TECH 600V 10A
Datasheet: IGP10N60TXKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.472 ea
Line Total: USD 1.47

Availability - 27
Ships to you between
Thu. 20 Jun to Mon. 24 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
27 - WHS 1


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 1.472
10 : USD 1.219
100 : USD 1.0132
250 : USD 1.0039
500 : USD 0.8936
1000 : USD 0.7624
5000 : USD 0.7567
10000 : USD 0.7325

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
Cnhts
Hts Code
Mxhts
Taric
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We are delighted to provide the IGP10N60TXKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGP10N60TXKSA1 and other electronic components in the IGBT Transistors category and beyond.

IGP10N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: Very low V 1.5V (typ.) CE(sat) C Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for : - Variable Speed Drive for washing machines and air conditioners G - induction cooking E - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behaviour NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge PG-TO-220-3 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGP10N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.35 K/W t h J C junction case Thermal resistance, R 62 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =10A C E ( s a t ) GE C T =25 C - 1.5 2.05 j - 1.8 - T =175 C j Gate-emitter threshold voltage V I =0.3mA,V =V 4.1 4.6 5.7 G E ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 1000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =10A - 6 - S fs CE C Integrated gate resistor R none G i n t Dynamic Characteristic Input capacitance C V =25V, - 551 - pF i s s CE V =0V, Output capacitance C - 40 - o s s GE f=1MHz Reverse transfer capacitance C - 17 - r s s Gate charge Q V =480V, I =10A - 62 - nC G a t e CC C V =15V GE Internal emitter inductance L TO-220-3-1 - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 100 - A C ( S C ) GE SC V = 400V, C C T = 25 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.5 30.04.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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