IGP15N60T Infineon

IGP15N60T electronic component of Infineon
IGP15N60T Infineon
IGP15N60T IGBT Transistors
IGP15N60T  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IGP15N60T IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGP15N60T IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IGP15N60T
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Datasheet: IGP15N60T Datasheet (PDF)
Price (USD)
1: USD 1.95 ea
Line Total: USD 1.95 
Availability : 6694
  
Ship by Wed. 24 Sep to Fri. 26 Sep
QtyUnit Price
1$ 1.95
10$ 0.9216
100$ 0.7689
500$ 0.6325
1000$ 0.5984
2500$ 0.5885
5000$ 0.5885
10000$ 0.5192

Availability 6694
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.95
10$ 0.9216
100$ 0.7689
500$ 0.6325
1000$ 0.5984
2500$ 0.5885
5000$ 0.5885
10000$ 0.5192


Availability 63
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.8
10$ 1.54
15$ 1.316
41$ 1.246
250$ 1.218

   
Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IGP15N60T from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGP15N60T and other electronic components in the IGBT Transistors category and beyond.

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IGP15N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology C Features: Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C G Short circuit withstand time 5s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) PG-TO220-3 Low EMI Pb-free lead plating RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : IGP15N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.15 K/W t h J C junction case Thermal resistance, R 62 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =15A C E ( s a t ) GE C T =25 C - 1.5 2.05 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =210A,V =V 4.1 4.9 5.7 G E ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 1000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =15A - 8.7 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 860 - pF i s s CE V =0V, Output capacitance C - 55 - o s s GE f=1MHz Reverse transfer capacitance C - 24 - r s s Gate charge Q V =480V, I =15A - 87 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 137.5 - A C ( S C ) GE SC V = 400V, C C T = 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.4 30.04.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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