IGP15N60TXKSA1 Infineon

IGP15N60TXKSA1 electronic component of Infineon
IGP15N60TXKSA1 Infineon
IGP15N60TXKSA1 IGBT Transistors
IGP15N60TXKSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IGP15N60TXKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGP15N60TXKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IGP15N60TXKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Trans IGBT Chip N-CH 600V 30A 3-Pin TO-220 Tube
Datasheet: IGP15N60TXKSA1 Datasheet (PDF)
Price (USD)
500: USD 0.7554 ea
Line Total: USD 377.7 
Availability : 0
  
QtyUnit Price
500$ 0.7554
1000$ 0.719
2000$ 0.7176

Availability 0
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 500
Multiples : 1
QtyUnit Price
500$ 0.6813
1000$ 0.6215
2000$ 0.5913
5000$ 0.5673


Availability 0
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 0.7554
1000$ 0.719
2000$ 0.7176


Availability 0
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 1.042

   
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We are delighted to provide the IGP15N60TXKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGP15N60TXKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IGP15N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology C Features: Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C G Short circuit withstand time 5s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) PG-TO220-3 Low EMI Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : IGP15N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.15 K/W t h J C junction case Thermal resistance, R 62 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =15A C E ( s a t ) GE C T =25 C - 1.5 2.05 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =210A,V =V 4.1 4.9 5.7 G E ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 1000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =15A - 8.7 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 860 - pF i s s CE V =0V, Output capacitance C - 55 - o s s GE f=1MHz Reverse transfer capacitance C - 24 - r s s Gate charge Q V =480V, I =15A - 87 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 137.5 - A C ( S C ) GE SC V = 400V, C C T = 150 C j 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.4 30.04.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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