IGW40N120H3 Infineon

IGW40N120H3 electronic component of Infineon
IGW40N120H3 Infineon
IGW40N120H3 IGBT Transistors
IGW40N120H3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IGW40N120H3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGW40N120H3 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IGW40N120H3
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 1200V; 40A; 483W; TO247-3; Series: H3
Datasheet: IGW40N120H3 Datasheet (PDF)
Price (USD)
1: USD 6.1125 ea
Line Total: USD 6.11 
Availability : 1234
  
Ship by Wed. 24 Sep to Fri. 26 Sep
QtyUnit Price
1$ 6.1125
10$ 3.4155
100$ 2.849
480$ 2.508

Availability 1234
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.1125
10$ 3.4155
100$ 2.849
480$ 2.508


Availability 246
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 9.17
4$ 6.314
9$ 5.978
30$ 5.768
90$ 5.74

   
Manufacturer
Product Category
Power Dissipation
Technology
Technology
Series
Mounting
Case
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
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We are delighted to provide the IGW40N120H3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGW40N120H3 and other electronic components in the IGBT Transistors category and beyond.

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The Infineon IGW40N120H3 is a 3rd generation 1200 V IGBT module which is specifically designed for use in High Temperatures. This part is especially suitable for use in automotive, renewable energy, power electronics and industrial motor drive applications. It features low switching losses, high robustness and reliable operation at high temperatures. The standard gate resistance of 4.76Ohm is designed to theoretically sustain a blocking voltage up to 1200 V and the device provides a maximum DC current of 40 A. This part comes with fast and soft dV/dt and dI/dt capabilities, allowing for faster switching and better dynamic performance. The module also has under-voltage lockout and thermally enhanced package with a high isolation voltage rating of 1500 V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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