IHW15N120R3FKSA1 Infineon

IHW15N120R3FKSA1 electronic component of Infineon
IHW15N120R3FKSA1 Infineon
IHW15N120R3FKSA1 IGBT Transistors
IHW15N120R3FKSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IHW15N120R3FKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IHW15N120R3FKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IHW15N120R3FKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247
Datasheet: IHW15N120R3FKSA1 Datasheet (PDF)
Price (USD)
1: USD 3.65 ea
Line Total: USD 3.65 
Availability : 212
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 3.65
10$ 2.268
100$ 1.65
480$ 1.397
1200$ 1.243
2640$ 1.232

Availability 212
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.65
10$ 2.268
100$ 1.65
480$ 1.397
1200$ 1.243
2640$ 1.232


Availability 291
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 0
QtyUnit Price
1$ 4.676
7$ 2.772
19$ 2.618


Availability 705
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 206
Multiples : 1
QtyUnit Price
206$ 2.2812
500$ 2.0469
1000$ 1.8906
10000$ 1.6875
100000$ 1.4143


Availability 465
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 206
Multiples : 1
QtyUnit Price
206$ 2.2812
500$ 2.0469
1000$ 1.8906
10000$ 1.6875
100000$ 1.4143


Availability 82
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 60
Multiples : 1
QtyUnit Price
60$ 4.3342
91$ 2.8777
115$ 2.2667
137$ 1.9106
153$ 1.7072
250$ 1.6251
500$ 1.3754

   
Manufacturer
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Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
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Pd - Power Dissipation
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We are delighted to provide the IHW15N120R3FKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IHW15N120R3FKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IHW15N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features: Powerful monolithic body diode with low forward voltage designed for soft commutation only TM TRENCHSTOP technology applications offers: - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive temperature coefficient in V CEsat Low EMI Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models: IHW15N120R3 Resonant Switching Series Table of Contents Description 1 Table of Contents . 2 Maximum Ratings . 3 Thermal Resistance . 3 Electrical Characteristics 4 Electrical Characteristics Diagrams . 6 Package Drawing .12 Testing Conditions 13 Revision History 14 Disclaimer .15 Datasheet 2 V 2.5 2018-03-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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