IHW30N135R5XKSA1 Infineon

Name: IHW30N135R5XKSA1
Brand: Infineon
SKU: IHW30N135R5XKSA1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IHW30N135R5XKSA1 electronic component of Infineon

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IHW30N135R5XKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IHW30N135R5XKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No.	IHW30N135R5XKSA1
Manufacturer:	Infineon
Category:	IGBT Transistors
Description:	IGBT Transistors TRENCHSTOP RC-H5 1200V IGBT
Datasheet:	IHW30N135R5XKSA1 Datasheet (PDF)

Price (USD)

240: USD 1.8412 ea
Line Total: USD 441.89

Availability : 0

Qty	Unit Price
240	$ 1.8412
480	$ 1.6125

IHW30N135R5XKSA1 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 225

Ship by Wed. 19 Nov to Fri. 21 Nov

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 3.878
8	$ 2.674
20	$ 2.52

We are delighted to provide the IHW30N135R5XKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IHW30N135R5XKSA1 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

IHW30N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features: Powerful monolithic body diode with low forward voltage designed for soft commutation TM TRENCHSTOP technology offering: - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive temperature coefficient in V CEsat Low EMI Qualified according to JESD-022 for target applications Pb-free lead plating RoHS compliant Halogen free (according to IEC 61249-2-21) Complete product spectrum and PSpice Models: IHW30N135R5 Resonant Switching Series Table of Contents Description 1 Table of Contents . 2 Maximum Ratings . 3 Thermal Resistance . 3 Electrical Characteristics 4 Electrical Characteristics Diagrams . 6 Package Drawing .12 Testing Conditions 13 Revision History 14 Disclaimer .15 Datasheet 2 V 2.3 2019-09-20

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1350 V 1350 V
Collector-Emitter Saturation Voltage 1.65 V 1.65 V
Maximum Gate Emitter Voltage 20 V 20 V
Continuous Collector Current at 25 C 60 A 60 A
Gate-Emitter Leakage Current 100 uA 100 uA
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 330 W 330 W
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 175 C + 175 C
Series Rc - H5 Rc - H5
Continuous Collector Current Ic Max 60 A 60 A
Brand Infineon Technologies Infineon Technologies
Product Type Igbt Transistors Igbt Transistors
Factory Pack Quantity : 240 240
Subcategory Igbts Igbts
Tradename Trenchstopâ ¢ Trenchstopâ ¢